FDC6420

FDC6420C September 2001 FDC6420C 20V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). Applications • • • DC/DC converter Load switch LCD display inverter D2 S1 D1 Q2(P) 4 G2 3 2 1 Q1(N) 5 6 SuperSOT Pin 1 TM -6 S2 G1 SuperSOT™-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Q1 20 ±12 (Note 1a) Q2 –20 ±12 –2.2 –6 0.96 0.9 0.7 –55 to +150 Units V V A 3.0 12 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W Package Marking and Ordering Information Device Marking .420 Device FDC6420C Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2001 Fairchild Semiconductor Corporation FDC6420C Rev C(W) FDC6420C Electrical Characteristics Symbol Parameter Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) TA = 25°C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 µ A VGS = 0 V, ID = –250 µ A ID = 250 µ A, Ref. to 25°C ID = –250 µ A, Ref. to 25°C VDS = 16 V, VGS = 0 V VDS = –16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VGS = –12 V, VDS = 0 V VGS = –12 V, VDS = 0 V VDS = VGS, ID = 250 µ A VDS = VGS, ID = –250 µ A ID = 250 µ A, Ref. To 25°C ID = –250 µ A, Ref. to 25°C VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125°C VGS = –4.5 V, ID = –2.2 A VGS =– 2.5 V, ID = –1.8 A VGS= – 4.5 V,ID=–2.2 A,TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = –5 V VDS = 5 V ID = 2.5 A ID = –2.0A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min 20 –20 Typ Max Units V 13 –11 1 –1 100 100 –100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Q1 Q2 Q1 Q2 Q1 0.5 –0.6 0.9 –1.0 –3 –3 50 66 71 100 145 137 1.5 –1.5 V mV/°C 70 95 106 125 190 184 mΩ Q2 ID(on) gFS On–State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 12 –6 10 6 A S VGS = –4.5 V, VDS = –5 V Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 VDS=10 V, V GS= 0 V, f=1.0MHz VDS=–10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=–10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=–10 V, V GS= 0 V, f=1.0MHz 324 337 82 88 42 51 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 For Q1: VDS =10 V, VGS= 4.5 V, 5 I DS= 1 A RGEN = 6 Ω 9 7 12 13 10 1.6 5 10 18 14 22 23 20 3 10 4.6 ns ns ns ns nC nC nC For Q2: VDS =–10 V, I DS= –1 A VGS= –4.5 V, RGEN = 6 Ω For Q1: VDS =10 V, I DS= 3.0 A VGS= 4.5 V, For Q2: VDS =–10 V, I DS= –2.2 A VGS= –4.5 V, 3.3 3.7 0.95 0.68 0.7 1.3 FDC6420C Rev C(W) FDC6420C Electrical Characteristics Symbol IS VSD TA = 25°C unless otherwise noted Parameter Test Conditions Q1 Q2 (Note 2) (Note 2) Min Typ Max Units 0.8 –0.8 A V Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Q1 Q2 VGS = 0 V, IS = 0.8 A VGS = 0 V, IS = 0.8 A 0.7 –0.8 1.2 –1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 130 °C/W when mounted on a 0.125 2 in pad of 2 oz. copper. b) 140 °C/W when 2 mounted on a .004 in pad of 2 oz copper c) 180 C°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC6420C Rev C(W) FDC6420C Typical Characteristics: N-Channel 12 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = 4.5V ID, DRAIN CURRENT (A) 10 3.5V 8 6 4 2 0 0 3.0V 2.5V VGS = 2.0V 1.8 1.6 2.0V 1.4 2.5V 1.2 3.0V 3.5V 4.5V 1 1 2 3 0.8 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.22 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 3.0A VGS = 4.5V 1.4 ID = 1.5A 0.18 1.2 0.14 TA = 125 C 0.1 o 1 0.8 0.06 TA = 25 C 0.02 o 0.6 -50 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V ID, DRAIN CURRENT (A) 8 TA = -55oC 25 C o VGS = 0V 10 1 0.1 0.01 0.001 0.0001 125oC 6 TA = 125oC 25 C -55oC o 4 2 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6420C Rev C(W) FDC6420C Typical Characteristics 5 VGS , GATE-SOURCE VOLTAGE (V) 450 ID = 3A VDS = 5V 15V 10V 360 CAPACITANCE (pF) CISS 270 f = 1 MHz VGS = 0 V 4 3 2 180 COSS 90 CRSS 1 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 5 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 10ms 100ms 1ms 4 SINGLE PULSE RθJA = 180°C/W TA = 25°C 3 1 DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 180oC/W TA = 25oC 0.01 0.1 1 1s 10s 2 1 0 10 100 0.1 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDC6420C Rev C(W) FDC6420C Typical Characteristics: P-Channel 6 -3.0V -2.5V -3.5V 4 3 -2.0V 2 -1.8V 1 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS =- 4.5V -ID, DRAIN CURRENT (A) 5 2.75 2.5 VGS = -2.0V 2.25 2 1.75 1.5 1.25 1 0.75 0 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) -2.5V -3.0V -3.5V -4.5V Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.2A VGS = -4.5V 1.4 ID = -1.1 A 0.35 0.3 0.25 0.2 1.2 1 TA = 125 C 0.15 0.1 o 0.8 TA = 25 C 0.6 -50 -25 0 25 50 75 100 o o 125 150 0.05 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. 5 VDS = -5V -ID, DRAIN CURRENT (A) 4 TA = -55 C 125oC o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125oC 0.1 25 C 0.01 -55 C 0.001 o o 25 C o 3 2 1 -IS, REVERSE DRAIN CURRENT (A) 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6420C Rev C(W) FDC6420C Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -2.2A 4 VDS =- 5V -10V CAPACITANCE (pF) -15V 600 f = 1MHz VGS = 0 V 500 400 CISS 300 200 COSS 100 CRSS 0 3 2 1 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 10 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100ms 1 10s DC 1s 10ms P(pk), PEAK TRANSIENT POWER (W) 5 Figure 18. Capacitance Characteristics. 4 SINGLE PULSE RθJA = 180°C/W TA = 25°C 3 2 0.1 VGS = -4.5V SINGLE PULSE o RθJA = 180 C/W TA = 25 C o 1 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.1 1 10 t1, TIME (sec) 100 1000 Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJA(t) = r(t) * RθJA RθJA = 180°C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDC6420C Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4