FDC6561AN

April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 S1 D1 1 .56 G2 S2 4 3 5 2 SuperSOT TM-6 pin 1 G1 6 1 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise note Ratings Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) 30 ±20 2.5 10 0.96 0.9 0.7 -55 to 150 V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W FDC6561AN Rev.C © 1999 Fairchild Semiconductor Corporation ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 55 oC VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V o 30 23.6 1 10 100 -100 V mV/oC µA µA nA nA ∆BVDSS/∆TJ IDSS IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 oC VGS = 10 V, ID = 2.5 A TJ = 125 C VGS = 4.5 V, ID = 2.0 A o 1 1.8 -4 0.082 0.122 0.113 3 V mV/oC ∆VGS(th)/∆TJ RDS(ON) 0.095 0.152 0.145 Ω ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Notes: On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Continuous Source Diode Current Drain-Source Diode Forward Voltage VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 2.5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 10 5 220 50 25 A S pF pF pF 12 18 22 6 3.2 1 1.3 0.75 ns ns ns ns nC nC nC A V DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2) VDD = 5 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 6 10 12 2 VDS = 15 V, ID = 2.5 A VGS = 5 V 2.3 0.7 0.9 DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 0.75 A (Note 2) 0.78 1.2 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. a. 130OC/W on a 0.125 in2 pad of 2oz copper. b. 140OC/W on a 0.005 in2 pad of 2oz copper. c. 180OC/W on a minimum pad. FDC6561AN Rev.C Typical Electrical Characteristics 10 I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE VGS =10V 6.0V 4.5V 4.0V R DS(ON) , NORMALIZED 2 1.8 1.6 1.4 1.2 1 0.8 8 VGS = 4.0V 4.5V 5.0V 6.0V 7.0V 10V 6 4 3.5V 2 3.0V 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 0 2 4 6 I D , DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , ON-RESISTANCE (OHM) 0.3 I D = 2.5 A VGS = 10 V 1.4 I D = 1.3A 0.25 R DS(ON) , NORMALIZED 1.2 0.2 1 0.15 TA = 125°C 0.8 0.1 TA = 25°C 0.05 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 ID , DRAIN CURRENT (A) 8 TA = -55°C 125°C 25°C IS , REVERSE DRAIN CURRENT (A) VDS = 5V V GS = 0V 1 TA = 125°C 0.1 6 25°C -55°C 4 0.01 2 0.001 0 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) 6 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5.Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6561AN Rev.C Typical Electrical Characteristics (continued) 10 VGS , GATE-SOURCE VOLTAGE (V) 500 ID = 2.5A 8 C iss CAPACITANCE (pF) VDS = 5V 15V 200 100 6 10V 4 C oss 50 2 20 0 f = 1 MHz V GS = 0V C rss 0 1 2 Q g , GATE CHARGE (nC) 3 4 10 0.1 0.5 1 2 5 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 10 I D , DRAIN CURRENT (A) 3 1 0.3 0.1 0.03 0.01 0.1 ) ON S( RD IT LIM 5 100 us 4 POWER (W) 1m s 10m s 100 ms 1s DC SINGLE PULSE RθJA =180°C/W TA = 25°C 3 2 VGS = 10V SINGLE PULSE RθJA =180°C/W TA = 25°C 0.3 1 3 1 10 30 50 0 0.01 0.1 1 10 100 300 VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 0.05 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA =180°C/W P(pk) t1 t2 0.02 0.01 0.0001 Single Pulse TJ - T A = P * R JA (t) θ Duty Cycle, D = t 1 / t 2 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDC6561AN Rev.C SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figure 1.0 Customize Label Antistatic Cover Tape Conductive Embossed Carrier Tape F63TNR Label 631 SSOT-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 3,000 7” Dia 184x187x47 9,000 0.0158 0.1440 D87Z TNR 10,000 13” 343x343x64 20,000 0.0158 0.4700 631 631 631 Pin 1 SSOT-6 Unit Orientation 343mm x 342mm x 64mm Intermediate box for D87Z Option F63TNR Label F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for Standard Option F63TNR Label LOT: CBVK741B019 FSID: FDC633N QTY: 3000 SPEC: Trailer SSOT-6 Tape Leader Configuration: Figure 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: QARV: (F63TNR)2 Carrier Tape Cover Tape Trailer Tape 160mm minimum Components Leader Tape 390mm minimum © 1998 Fairchild Semiconductor Corporation December 1998, Rev. B SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-6 (8mm) A0 3.23 +/-0.10 B0 3.18 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.00 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.255 +/-0.150 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7” Diameter Option B Min Dim C See detail AA W3 Dim D min 13” Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7” Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9 8mm 13” Dia December 1998, Rev. B SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SuperSOT™-6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 © 1998 Fairchild Semiconductor Corporation September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.