FDD5N53TM

FDD5N53 / FDU5N53 N-Channel MOSFET January 2009 FDD5N53/FDU5N53 N-Channel MOSFET 530V, 4A, 1.5Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G S D G D-PAK FDD Series G DS I-PAK FDU Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDD5N53/FDU5N53 530 ±30 4 2.4 16 256 4 4 4.5 40 0.3 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.4 110 Units o C/W ©2009 Fairchild Semiconductor Corporation FDD5N53/FDU5N53 Rev. A 1 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDD5N53 FDD5N53 FDU5N53 Device FDD5N53TM FDD5N53TF FDU5N53TU Package D-PAK D-PAK I-PAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000 70 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 530V, VGS = 0V VDS = 424V, TC = 125oC VGS = ±30V, VDS = 0V 530 0.6 1 10 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 2A VDS = 40V, ID = 2A (Note 4) 3.0 - 1.25 4.3 5.0 1.5 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 480 66 5 11 3 5 640 88 8 15 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A R G = 25 Ω (Note 4, 5) - 13 22 28 20 36 54 66 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4A VGS = 0V, ISD = 5A dIF/dt = 100A/μs (Note 4) - 300 1.8 4 16 1.4 - A A V ns μC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 32mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD5N53/FDU5N53 Rev. A 2 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] ID,Drain Current[A] VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 150 C 25 C o o 1 1 -55 C o 0.1 0.04 0.1 *Notes: 1. 250μs Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 10 VDS,Drain-Source Voltage[V] 30 0.1 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 70 RDS(ON) [Ω], Drain-Source On-Resistance 2.5 IS, Reverse Drain Current [A] 150 C o 2.0 VGS = 10V 10 25 C o 1.5 VGS = 20V 1.0 0 3 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 6 ID, Drain Current [A] 9 12 1 0.4 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 250V VDS = 400V 8 750 Capacitances [pF] Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 500 Coss 4 250 Crss 2 *Note: ID = 5A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 4 8 Qg, Total Gate Charge [nC] 12 FDD5N53/FDU5N53 Rev. A 3 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -75 *Notes: 1. VGS = 10V 2. ID = 2A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 9. Maximum Safe Operating Area 30 30μs Figure 10. Maximum Drain Current vs. Case Temperature 4.5 4 10 ID, Drain Current [A] 1ms 100μs ID, Drain Current [A] 3 1 Operation in This Area is Limited by R DS(on) 10ms DC 2 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 1 0.01 1 10 100 VDS, Drain-Source Voltage [V] 800 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 3 Thermal Response [ZθJC] 1 0.5 0.2 0.1 PDM t1 t2 0.1 0.05 *Notes: 0.02 0.01 Single pulse 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 0.01 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDD5N53/FDU5N53 Rev. A 4 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD5N53/FDU5N53 Rev. A 5 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD5N53/FDU5N53 Rev. A 6 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD5N53/FDU5N53 Rev. A 7 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Mechanical Dimensions I-PAK Dimensions in Millimeters FDD5N53/FDU5N53 Rev. A 8 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDD5N53/FDU5N53 Rev. A 9 www.fairchildsemi.com