FDD6676S

FDD6676S December 2002 FDD6676S 30V N-Channel PowerTrench® MOSFET General Description The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 78 A, 30 V RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter D D G S G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Ratings 30 ±16 78 100 70 3.1 1.3 –55 to +150 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 1.8 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6676S Device FDD6676S Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2002 Fairchild Semiconductor Corporation FDD6676S Rev D (W) FDD6676S Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID = 16A Min Typ Max Units 250 16 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VGS = 0 V VDS = 0 V 30 24 500 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance On-State Drain Current VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 16 A,TJ=125°C VDS = 5 V, ID = 16 A VGS = 10 V, VDS = 5 V 1 1.3 –0.9 4.6 5.2 7.2 79 3 V mV/°C mΩ 6.0 7.1 9.0 gFS ID(on) S A 60 Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, V GS = 0 V, 4770 840 305 1.5 pF pF pF Ω f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 13 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 13 86 34 41 VDS = 15V, VGS = 5 V ID = 16 A, 10 10 23 23 138 54 58 ns ns ns ns nC nC nC FDD6676S Rev. D (W) FDD6676S Electrical Characteristics (continued) Symbol IS VSD tRR IRM QRR TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 3.5 A mV ns A nC Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Maximum Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A (Note 2) 385 29 700 dIF/dt = 300A/us, IF = 16A 2.1 30 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6676S Rev. D (W) FDD6676S Typical Characteristics 90 75 ID, DRAIN CURRENT (A) 4.5V 60 2.5V 45 30 15 2.0V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.0V 2.3 VGS = 2.5V 1.8 3.0V 1.3 3.5V 4.5V 6.0V 10V 0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 78A VGS =10V ID = 8.0A 0.016 1.4 1.2 0.012 TA = 125oC 0.008 TA =25oC 0.004 1 0.8 0.6 -50 -25 0 25 50 75 o 100 125 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature 90 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 75 ID, DRAIN CURRENT (A) 60 45 30 15 -55 C 0 1 1.5 2 2.5 3 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage 10 VGS = 0V 1 TA = 125oC 25 C o TA = 125oC 25oC 0.1 -55oC 0.01 0 0.2 0.4 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6676S Rev. D (W) FDD6676S Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 78A 8 VDS = 10V 6 20V 15V CAPACITANCE (pF) 6000 f = 1MHz VGS = 0 V 4000 Ciss 4 2000 Coss Crss 2 0 0 20 40 Qg, GATE CHARGE (nC) 60 80 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics RDS(ON) LIMIT ID, DRAIN CURRENT (A) 100 10 100us 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25 C o 40 SINGLE PULSE RθJA = 125°C/W TA = 25°C 30 1 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W 0.1 0.1 0.05 P(pk 0.02 0.01 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6676S Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1