FDD6692

FDD6692/FDU6692 April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V • Low gate charge (18 nC typical) • Fast switching Applications • DC/DC converter • Motor drives • High performance trench technology for extremely low RDS(ON) D D G S I-PAK (TO-251AA) GDS G D-PAK TO-252 (TO-252) S TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±16 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W 54 162 57 3.8 1.6 -55 to +175 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.6 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6692 FDU6692 Device FDD6692 FDU6692 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 2001 Fairchild Semiconductor Corporation FDD/FDU6692 Rev C(W) FDD6692/FDU6692 Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID=14A Min Typ Max Units 165 14 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = –16 V, VGS = 0 V VDS = 0 V VDS = 0 V 30 26 1 100 –100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A ID = 13 A VGS = 4.5 V, VGS = 10 V, ID = 14 A, TJ = 125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 14 A 1 1.6 –5 9.5 11.5 16.5 3 V mV/°C 12 14.5 18 mΩ ID(on) gFS 50 54 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2164 357 138 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 9 5 35 10 18 10 56 20 25 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 14 A, 18 5 5 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 3.2 0.72 1.2 A V FDD/ FDU6692 Rev. C(W) FDD6692/FDU6692 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD/ FDU6692 Rev. C(W) FDD6692/FDU6692 Typical Characteristics 50 6.0V ID, DRAIN CURRENT (A) 40 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 2.25 2 1.75 1.5 3.5V 1.25 1 0.75 0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A) 4.5V 6.0V 10V VGS = 3.0V 30 20 10 2.5V 0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 14A VGS = 10V ID = 7.0 A 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 50 VDS = 5V ID, DRAIN CURRENT (A) 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC 125oC VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC 30 20 10 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD/ FDU6692 Rev. C(W) FDD6692/FDU6692 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 2500 CISS 2000 1500 1000 500 CRSS 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS 3000 f = 1MHz VGS = 0 V 4 2 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W TA = 25oC 0.01 0.01 DC 80 Figure 8. Capacitance Characteristics. 60 SINGLE PULSE RθJA = 96°C/W TA = 25°C 40 20 0.1 0 0.1 1 10 100 0.1 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 R θ JA (t) = r(t) + R θ JA R θ JA = 9 6 °C/W 0.05 0.02 0.1 0.1 P(pk) t1 t2 T J - T A = P * R θ JA (t) Duty Cycle, D = t1 / t2 0.01 0.01 SINGLE PULSE 0 .001 0.001 0.01 0.1 1 t1 , TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD/ FDU6692 Rev. C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET  VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1