FDD6796A

FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench® MOSFET 25 V, 5.7 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A 100% UIL tested RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 40 67 20 150 40 42 3.7 -55 to +175 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.6 40 °C/W Package Marking and Ordering Information Device Marking FDD6796A FDU6796A Device FDD6796A FDU6796A_F071 Package D-PAK (TO-252) TO-251AA Reel Size 13 ’’ N/A(Tube) Tape Width 12 mm N/A Quantity 2500 units 75 units ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 1 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 25 16 1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 15.2 A VGS = 10 V, ID = 20 A, TJ = 150 °C VDS = 5 V, ID = 20 A 1.0 1.9 -6 4.3 11.1 6.5 118 5.7 15.0 8.6 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 1336 298 266 1.2 1780 400 400 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 13 V, ID = 2 0 A VDD = 13 V, ID = 20 A, VGS = 10 V, RGEN = 6 Ω 8 7 19 4 24 14 4.0 5.7 16 14 34 10 34 20 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 20 A (Note 2) (Note 2) 0.8 0.9 15 4 1.2 1.3 27 10 V ns nC IF = 20 A, di/dt = 100 A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 40 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A. ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 2 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS = 8 V VGS = 10 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 120 90 60 VGS = 3.5 V VGS = 6 V 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 4.5 V 3 VGS = 3.5 V VGS = 4 V VGS = 4 V 2 VGS = 8 V VGS = 4.5 V VGS = 6 V 30 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1 VGS = 10 V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 30 60 90 120 150 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 SOURCE ON-RESISTANCE (mΩ) ID = 20 A VGS = 10 V 1.6 1.4 1.2 1.0 0.8 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 15 ID = 20 A rDS(on), DRAIN TO 10 TJ = 150 oC 5 TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 150 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 200 100 VGS = 0 V 120 ID, DRAIN CURRENT (A) VDS = 3 V 90 60 TJ = 175 oC 10 TJ = 175 oC TJ = -55 oC 1 TJ = 25 oC 30 TJ = 25 oC TJ = -55 oC 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 3 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 20 A 5000 8 VDD = 10 V 6 VDD = 13 V VDD = 16 V CAPACITANCE (pF) Ciss 1000 4 2 Coss f = 1 MHz VGS = 0 V Crss 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 100 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 40 TJ = 125 oC 60 VGS = 10 V 10 TJ = TJ = 150 oC 25 oC 40 Limited by Package 20 RθJC = 3.6 C/W o VGS = 4.5 V 1 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 o 150 175 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 P(PK), PEAK TRANSIENT POWER (W) 10 us 1000 VGS = 10 V 10 THIS AREA IS LIMITED BY rDS(on) 100 us SINGLE PULSE RθJC = 3.6 oC/W 1 ms 10 ms 100 ms DC 100 TC = 25 oC 1 SINGLE PULSE TJ = MAX RATED RθJC = 3.6 oC/W TC = 25 oC 0.1 0.1 1 10 100 10 -5 10 10 -4 10 -3 10 -2 10 -1 1 10 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 4 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE RθJC = 3.6 C/W o 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 0.0005 -4 10 10 -3 RθJA = 96 C/W (Note 1b) -2 -1 o 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 5 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 6 www.fairchildsemi.com