FDD8444_06

FDD8444 N-Channel PowerTrench® MOSFET November 2006 FDD8444 ® N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Typ rDS(on) = 4mΩ at VGS = 10V, ID = 50A Typ Qg(10) = 89nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant REE I DF tm Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V Systems ©2006 Fairchild Semiconductor Corporation FDD8444 Rev B (W) LE A M ENTATIO LE N MP 1 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Continuous (VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 2) Drain Current Continuous (VGS = 10V) (Note 1) Parameter Ratings 40 ±20 145 20 Figure 4 535 153 1.02 -55 to +175 mJ W W/oC oC Units V V A TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area 2 0.98 52 o o C/W C/W Package Marking and Ordering Information Device Marking FDD8444 Device FDD8444 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 32V VGS = 0V VGS = ±20V TJ = 150oC 40 1 250 ±100 V µA nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 50A, VGS= 10V ID = 50A, VGS= 10V, TJ = 175oC 2 2.5 4 7.2 4 5.2 9.4 mΩ V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 5V VGS = 0 to 2V VDD = 20V ID = 50A Ig = 1.0mA 6195 585 332 1.9 89 43 11 23 11 20 116 56 14.3 pF pF pF Ω nC nC nC nC nC nC FDD8444 Rev B (W) 2 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 20V, ID = 50A VGS = 10V, RGS = 2Ω 12 78 48 15 135 95 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 50A ISD = 25A IF = 50A, dIF/dt = 100A/µs 0.9 0.8 39 45 1.25 1.0 51 59 V ns nC Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.67mH, IAS = 40A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8444 Rev B (W) 3 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics POWER DISSIPATION MULIPLIER 1.2 1.0 0.8 0.6 0.4 0.2 0.0 160 140 ID, DRAIN CURRENT (A) CURRENT LIMITED BY PACKAGE VGS = 10V 120 100 80 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE - DESCENDING ORDER Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 -5 10 SINGLE PULSE 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 1000 IDM, PEAK CURRENT (A) 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 100 10 -5 10 SINGLE PULSE 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability FDD8444 Rev B (W) 4 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics 1000 ID, DRAIN CURRENT (A) 10us 500 IAS, AVALANCHE CURRENT (A) 100 100us 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25oC 10 CURRENT LIMITED BY PACKAGE 10 STARTING TJ = 150oC 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 100 ID, DRAIN CURRENT (A) 80 60 40 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 5V TJ = 175oC TJ = 25oC 100 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V VGS = 4.5V ID, DRAIN CURRENT (A) 80 60 40 TJ = -55oC VGS = 4V 20 0 0.0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.3 0.6 0.9 1.2 1.5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics ID = 50A rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 12 10 8 6 4 2 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 14 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TJ = 175oC TJ = 25 C o 4 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 5 10 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDD8444 Rev B (W) 5 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics 1.2 1.1 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250µA 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 Ciss Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 ID = 50A CAPACITANCE (pF) VDD = 15V VDD = 20V VDD = 25V Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDD8444 Rev B (W) 6 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 Preliminary No Identification Needed Full Production Obsolete Not In Production FDD8444 Rev B (W) 7 www.fairchildsemi.com