FDD8447L_08

FDD8447L 40V N-Channel PowerTrench® MOSFET May 2008 FDD8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant Applications Inverter Power Supplies D G S D G D O -2 52 T -PA K (TO -252) Parameter S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID IS EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Max Pulse Diode Current Drain-Source Avalanche Energy Power Dissipation TC= 25°C TA= 25°C TA= 25°C Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 3) TC= 25°C TC= 25°C TA= 25°C (Note 1a) Ratings 40 ±20 50 57 15.2 100 100 153 44 3.1 1.3 -55 to +150 °C W A mJ A Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 2.8 40 96 °C/W Package Marking and Ordering Information Device Marking FDD8447L Device FDD8447L Package D-PAK(TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDD8447L Rev.C3 1 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 32V, VGS = 0V VGS = ±20V, VGS = 0V 40 35 1 ±100 V mV/°C µA nA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A VGS = 10V, ID = 14A, TJ=125°C VDS = 5V, ID = 14A 1.0 1.9 -5 7.0 8.5 10.4 58 8.5 11.0 14.0 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 1970 250 150 1.27 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = 20V, ID = 14A VGS = 10V VDD = 20V, ID = 1A VGS = 10V, RGEN = 6Ω 12 12 38 9 37 20 6 7 21 21 61 18 52 28 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14A (Note 1a) (Note 2) 0.8 22 11 2.6 1.2 A V ns nC IF = 14A, di/dt = 100A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25oC, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V. --------------- 4 FDD8447L Rev.C3 2 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics 100 VGS = 10V 3 4.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.0V ID, DRAIN CURRENT (A) 80 2.6 2.2 1.8 3.5V 6.0V 5.0V 4.5V 60 3.5V 40 1.4 1 0.6 4.0V 4.5V 20 5.0V 6.0V 10.0V 3.0V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 1.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 rDS(ON), ON-RESISTANCE (OHM) ID = 14A VGS = 10V I D = 7A 0.0175 0.015 TA = 125 C 0.0125 0.01 0.0075 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 o 1.2 1 0.8 T A = 25 C o 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 Figure 3. On-Resistance Variation with Temperature 100 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V 100 10 1 0.1 0.01 0.001 0.0001 ID, DRAIN CURRENT (A) 80 60 TA = 125oC 25 C -55oC o 40 TA = 125 C o -55 C o 20 25 C o 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD8447L Rev.C3 3 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 3000 ID = 14A VDS = 10V 30V 8 2500 CAPACITANCE (pF) 2000 1500 1000 Coss f = 1MHz VGS = 0 V 6 20V Ciss 4 2 500 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 0 Crss 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 7. Gate Charge Characteristics 1000 100µs 1ms 10 DC VGS = 10V SINGLE PULSE o RθJA = 96 C/W TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 o Figure 8. Capacitance Characteristics 100 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RθJA = 96°C/W TA = 25°C ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10ms 1s 100ms 80 60 1 40 0.1 20 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 100 I(AS), AVALANCHE CURRENT (A) 100 I(pk), PEAK TRANSIENT CURRENT (A) 80 SINGLE PULSE RθJA = 96°C/W TA = 25°C TJ = 2 5 C o 60 10 40 20 0 0.0001 1 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 0.1 1 tAV, TIME IN AVANCHE(ms) 10 Figure 11. Single Pulse Maximum Peak Current Figure 12. Unclamped Inductive Switching Capability FDD8447L Rev.C3 4 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 96°C/W 0.1 0.1 0.05 0.02 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 t1 0.01 0.01 SINGLE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD8447L Rev.C3 5 www.fairchildsemi.com FDD8447L 40V P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDD8447L Rev.C3 6 www.fairchildsemi.com