FDFM2P110

FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode August 2005 FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications Buck Boost Features -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A S G A 1 2 3 6 5 4 A S D C/D S G A TOP MLP 3x3 S D BOTTOM Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1a) Ratings -20 ±12 -3.5 -10 20 2 2 0.8 -55 to +150 Units V V A V A W o C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 60 145 o C/W oC/W Package Marking and Ordering Information Device Marking 2P110 Device FDFM2P110 Reel Size 7inch 1 Tape Width 12mm Quantity 3000 units FDFM2P110 Rev. C4 (W) ©2005 Fairchild Semiconductor Corporation FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, ID = -250µA, VGS = 0V ID = -250µA, Referenced to 25°C VGS = 0V, VDS = -16V VGS = ±12V, VDS = 0V -20 -11 -1 ±100 V mV/°C µA nA On Characteristics (Note 2) VGS(TH) ∆VGS(TH) ∆TJ RDS(ON) ID(ON) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250µA ID = -250µA, Referenced to 25°C ID = -3.5A, VGS = -4.5V ID = -3.0A, VGS = -2.5V ID = -3.5A, VGS = -4.5V, TJ = 125°C VGS = -2.5V, VDS = -5V ID = -3.5A, VDS = -5V -0.6 -10 -1.0 3 101 145 136 6 -1.5 140 200 202 A S mΩ V mV/°C Dynamic Characteristics CISS COSS CRSS RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz 280 65 35 7 pF pF pF Ω Switching Characteristics (Note 2) td(ON) tr td(OFF) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -3.5A, VGS = -4.5V VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 16Ω 8 12 11 3.2 3 0.7 1 16 22 20 6.4 4 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = -2 A (Note 2) -0.9 13 3 -2 -1.2 A V ns nC IF= -3.5A, dIF/dt=100A/µs Schottky Diode Characteristic VR IR VF Reverse Voltage Reverse Leakage Forward Voltage IR = 1mA V R = 5V IF = 1 A TJ = 25°C TJ = 100°C TJ = 25°C 20 0.32 100 10 0.39 V µA mA V 2 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθCA is guaranteed by design while RθCA is determined by the user's board design. a) 60oC/W when mounted on a 1in2 pad of 2 oz copper b) 145oC/W whe mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V 2.4 -3.5V -3.0V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -3.0V -3.5V VGS = -2.5V -ID, DRAIN CURRENT (A) 8 6 -2.5V 4 -2.0V 2 -4.0V -4.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 0.44 ID = -3.5A VGS = -4.5V 1.4 0.4 0.36 0.32 0.28 0.24 0.2 0.16 0.12 0.08 TA = 25oC TA = 125oC ID = -1.8A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 8 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V TA = -55oC 25oC 10 1 0.1 0.01 0.001 0.0001 VGS = 0V TA = 125oC 25oC -55 C o -ID, DRAIN CURRENT (A) 6 125oC 4 2 0 0.5 1 1.5 2 2.5 3 3.5 0.2 0.4 0.6 0.8 1 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.5A 4 -15V 3 CAPACITANCE (pF) 500 VDS = -5V -10V 400 Ciss f = 1MHz VGS = 0 V 300 2 200 Coss 1 100 Crss 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 0 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics IF, FORWARD LEAKAGE CURRENT (A) IR, REVERSE LEAKAGE CURRENT (A) 10 TJ = 125oC 1 TJ = 25oC 0.1 0.1 TJ = 125 C 0.01 o 0.001 TJ = 100 C o 0.0001 o 0.01 0.00001 TJ = 25 C 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.000001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage Figure 10. Schottky Diode Reverse Current Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Figure 11. Transient Thermal Response Curve 5 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode 6 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 7 FDFM2P110 Rev. C4 (W)