FDFMA2N028Z

FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode March 2008 FDFMA2N028Z 20V, 3.7A, 68mΩ Features MOSFET Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Application DC - DC Conversion Pin 1 A NC D A1 NC 2 D3 C MicroFET 2X2 G S 6C 5G 4S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG VRR IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings 20 ±12 3.7 6 1.4 0.7 -55 to +150 20 2 Units V V A W °C V A Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 °C/W Package Marking and Ordering Information Device Marking .N28 Device FDFMA2N028Z Package MicroFET 2X2 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FDFMA2N028Z Rev.B1 FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V ID = 250μA, referenced to 25°C VDS = 16V, VGS = 0V VGS = ±12V, VDS = 0V 20 15 1 ±10 V mV/°C μA μA On Characteristics VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Trans conductance VGS = VDS, ID = 250μA ID = 250μA, referenced to 25°C VGS = 4.5V, ID = 3.7A VGS = 2.5V, ID = 3.3A VGS = 4.5V, ID = 3.7A, TJ = 125°C VDS = 10V, ID = 3.7A 0.6 1.0 –4 37 50 53 16 68 86 90 S mΩ 1.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz 340 80 60 455 110 90 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 10V ID = 3.7A VGS = 4.5V VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω 8 8 14 3 4 0.7 1.1 16 16 26 6 6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 1.1A (Note 2) 0.7 11 2 1.1 1.2 A V ns nC IF = 3.7A, di/dt = 100A/μs Schottky Diode Characteristics VR IR Reverse Voltage Reverse Leakage IR = 1mA VR = 20V IF = 500mA VF Forward Voltage IF = 1A TJ = 25°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 20 30 10 0.32 0.21 0.37 0.28 300 45 0.37 0.26 0.435 0.33 V V μA mA FDFMA2N028Z Rev.B1 2 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (b) MOSFET RθJA = 173oC/W when mounted on a minimum pad of 2 oz copper. (c) Schottky RθJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) Schottky RθJA = 140oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)86oC/W when mounted on a 1in2 pad of 2 oz copper. d)140oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDFMA2N028Z Rev.B1 3 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 6 5 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 VGS = 2.0V 1.8 1.6 1.4 1.2 1.0 0.8 PULSE DURATION = 300μs DUTY CYCLE =2%MAX 4 3 2 1 0 0.0 VGS = 4.5V VGS = 3.0V VGS = 2.5V VGS = 2.0V PULSE DURATION = 300μs DUTY CYCLE = 2%MAX VGS = 1.5V VGS = 2.5V VGS = 3.0V VGS = 3.5V VGS = 4.5V 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 0 1 2 3 4 ID, DRAIN CURRENT(A) 5 6 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 150 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 1.85A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 3.7A VGS = 4.5V 125 100 75 50 25 TJ = 25oC PULSE DURATION = 300μs DUTY CYCLE = 2%MAX TJ = 125oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 6 5 4 3 2 1 0 0.5 TJ = -55oC TJ = 125oC PULSE DURATION = 300μs DUTY CYCLE = 2%MAX VDD=5V ID, DRAIN CURRENT (A) 1 0.1 TJ = 125oC TJ = 25oC 0.01 0.001 TJ = 25oC TJ = -55oC 1.0 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFMA2N028Z Rev.B1 4 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 3.7A 1000 Ciss 8 6 4 2 0 VDD = 5V VDD = 15V CAPACITANCE (pF) Coss 100 Crss f = 1MHz VGS = 0V VDD = 10V 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) 20 10 Figure 8. Capacitance Characteristics 50 40 30 20 10 0 -4 10 SINGLE PULSE SINGLE PULSE o RθJA = 173 C/W TA=25 C o rDS(on) LIMIT ID, DRAIN CURRENT (A) 100us 1ms 10ms 1 0.1 VGS=4.5V SINGLE PULSE R θJA =173 o 100ms C/W TA = 25 C o 1s 10s DC 0.01 0.1 1 10 60 10 -3 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area 10 IF, FORWARD CURRENT(A) TJ = 125oC Figure 10. Single Pulse Maximum Power Dissipation IR, REVERSE LEAKAGE CURRENT (mA) 100 TJ = 125oC 1 10 1 0.1 0.01 0.001 0.1 TJ = 85oC TJ = 85oC 0.01 TJ = 25oC TJ = 25oC 0.001 0 200 400 600 VF, FORWARD VOLTAGE(mV) 800 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 Figure 11. Schottky Diode Forward Current Figure 12. Schottky Diode Reverse Current FDFMA2N028Z Rev.B1 5 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 0.005 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDFMA2N028Z Rev.B1 6 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 FDFMA2N028Z Rev.B1 7 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench. MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDFMA2N028Z Rev.B1 8 www.fairchildsemi.com