FDFMA2P853_06

FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode July 2006 FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. Features MOSFET: -3.0 A, -20V. RDS(ON) = 120 m RDS(ON) = 160 m RDS(ON) = 240 m @ VGS = -4.5 V @ VGS = -2.5 V @ VGS = -1.8 V Schottky: VF < 0.46 V @ 500 mA Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant PIN A NC D A 1 2 3 6 5 4 C G S C D NC D MicroFET Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG C G S Ratings -20 8 (Note 1a) -2.2 -6 30 (Note 1a) (Note 1a) (Note 1b) 1 1.4 0.7 -55 to +150 Units V V A V A W o Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range C Thermal Characteristics R R R R JA JA JA JA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 o C/W Package Marking and Ordering Information Device Marking .853 Device FDFMA2P853 Reel Size 7inch 1 Tape Width 8mm Quantity 3000 units FDFMA2P853 Rev. D (W) ©2006 Fairchild Semiconductor Corporation FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Symbol BVDSS BVDSS TJ IDSS IGSS Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions ID = –250 A VGS = 0 V, ID = –250 A, Referenced to 25 C VDS = –16 V, VGS = ± 8 V, VGS = 0 V VDS = 0 V Min Typ Max Units –20 –12 –1 ±100 V mV/ C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 A VDS = VGS, ID = –250 A, Referenced to 25 C VGS = –4.5 V, ID = –3.0 A VGS = –2.5 V, ID = –2.5 A VGS = –1.8 V, ID = –1.0 A VGS= –4.5 V, ID = –3.0 A, TJ=125 C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –3.0 A –0.4 –0.7 2 90 120 172 118 –1.3 V mV/ C 120 160 240 160 m ID(on) gFS On–State Drain Current Forward Transconductance –20 7 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –10 V, f = 1.0 MHz V G S = 0 V, 435 80 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 9 11 15 6 18 19 27 12 6 ns ns ns ns nC nC nC VDS = –10 V, VGS = –4.5 V ID = –3.0 A, 4 0.8 0.9 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = –1.1 A (Note 2) –1.1 –0.8 17 6 –1.2 A V ns nC IF = –3.0 A, dIF/dt = 100 A/µs Schottky Diode Characteristics IR IR Reverse Leakage Reverse Leakage VR = 5 V VR = 20 V TJ = 25 C TJ = 125 C TJ = 25 C TJ = 85 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C 9.9 2.3 9.9 0.3 2.3 0.4 0.3 0.5 0.49 50 10 100 1 10 0.46 0.35 0.55 0.54 A mA A mA mA V V VF VF Forward Voltage Forward Voltage IF = 500mA IF = 1A 2 FDFMA2P853 Rev D (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. R JA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R JC is guaranteed by design while R JA is determined by the user's board design. (a) MOSFET R JA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET R JA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) Schottky R JA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (d) Schottky R JA = 140°C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper c) 86oC/W when mounted on a 1in2 pad of 2 oz copper d) 140oC/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 3 FDFMA2P853 Rev. D (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 6 VGS = -4.5V -2.5V -2.0V -3.5V -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.2 1.8 1.4 1 0.6 3 VGS = -1.5V 5 -ID, DRAIN CURRENT (A) 4 -1.8V 3 2 -1.5V -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V 1 0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 RDS(ON), ON-RESISTANCE (OHM) ID = -3.0A VGS = -4.5V 0.28 ID = -1.5A 0.22 0.16 TA = 125oC 0.1 TA = 25oC 0.04 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 6 VDS = -5V 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 1 5 -ID, DRAIN CURRENT (A) 4 3 2 1 25oC TA = 125oC 0.1 TA = 125 C 0.01 25oC -55oC o -55 C o 0.001 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDFMA2P853 Rev. D (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 700 600 CAPACITANCE (pF) f = 1MHz VGS = 0 V 4 VDS = -5V -15V 500 400 300 200 100 Crss 3 -10V Ciss 2 Coss 1 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 10 IF, FORWARD LEAKAGE CURRENT(A) IR, REVERSE LEAKAGE CURRENT (A) 0.01 1 TJ = 125oC 0.001 TJ = 125oC 0.1 TJ = 25 C o 0.0001 TJ = 85oC 0.01 0.00001 TJ = 25oC 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0.7 0.8 0.000001 0 5 10 15 VR, REVERSE VOLTAGE (V) 20 Figure 9. Schottky Diode Forward Voltage Figure 10. Schottky Diode Reverse Current Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 5 FDFMA2P853 Rev. D (W) FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode 6 FDFMA2P853 Rev. D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20