FDG315N
July 2000
FDG315N
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features •
2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V.
• • •
Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.
Applications • • •
DC/DC converter Load switch Power Management
D D
S
1
6
2
5
SC70-6
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
30 ±20 2 6 0.75 0.48 -55 to +150
Units
V V A W °C
(Note 1a)
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking .15 Device
FDG315N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
2000 Fairchild Semiconductor International
FDG315N Rev. C
FDG315N
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Forward Gate-Body Leakage Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
26 1 100 -100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 2 A VGS = 10 V, ID = 2 A, TJ = 125°C VGS = 4.5 V, ID = 1.7 A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 2 A
1
1.8 -4 0.100 0.140 0.130
3
V mV/°C
0.12 0.20 0.16
Ω
ID(on) GFS
3 5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
220 50 20
pF pF pF
Switching Characteristics
Id(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω
3 11 7 3
6 22 14 6 4
ns ns ns ns nC nC nC
VDS = 15 V, ID = 2 A, VGS = 5 V
2.1 0.8 0.7
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A
(Note 2)
0.42 0.7 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 170°C/W when mounted on a 1 in2 pad of 2oz copper. b) 260°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDG315N Rev. C
FDG315N
Typical Characteristics
10 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 8 6.0V 5.0V 6 3.5V 4 3.0V 2 1.8 V GS = 3 .5V 1.6 4.0V 1.4 1.2 1 0.8 0 1 2 3 4 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) 4.5V 5.0V 6.0V 8.0V 10V
2
0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.35 RDS(ON), ON-RESISTANCE (OHM) ID = 1A 0.3 0.25 0.2 TA = 125oC 0.15 0.1 0.05 0
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 2 A VGS = 10V 1.4
1.2
1
0.8
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
10 125 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V ID, DRAIN CURRENT (A) 8
T A = -55oC
25oC
V GS = 0 V
1
TA = 125oC 25oC
6
0.1
-55 oC
4
0.01
2
0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG315N Rev. C
FDG315N
Typical Characteristics
(continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 2A 8 VDS = 5V 10V
300 250 CAPACITANCE (pF) CISS 200 150 100 50 0
0 1 2 3 4 5
f = 1MHz VGS = 0 V
15V
6
4
2
COSS CRSS
0 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
10 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 1ms 10ms
POWER (W)
30 SINGLE PULSE 24 RθJA= 260 C/W TA= 25 C
o o
1
100ms 1s 10s
18
0.1
VGS = 10V SINGLE PULSE o RθJA = 260 C/W TA = 2 5 C
o
DC
12
6
0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5 0.2
R θJA (t) = r(t) * R θJA R θJA =260°C/W
P(pk)
0.1 0.05
0.1 0.05 0.01 0.02 Single Pulse
t1
t2
TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2
0.01 0.005 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDG315N Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST®
DISCLAIMER
FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench®
QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. F1
