FDG6322C

February 1998 FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. Features N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). SC70-6 SOT-23 SuperSOTTM-6 SOT-8 SO-8 SOIC-14 G2 D1 S2 1 Q1 6 2 pin 1 5 Q2 SC70-6 Mark: .22 S1 G1 D2 3 4 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted N-Channel P-Channel Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed 25 8 0.22 0.65 (Note 1) -25 -8 -0.41 -1.2 0.3 -55 to 150 6 V V A PD TJ,TSTG ESD Maximum Power Dissipation W °C kV Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS RθJA (Note1) 415 °C/W © 1998 Fairchild Semiconductor Corporation FDG6322C Rev.F DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type N-Ch P-Ch N-Ch P-Ch N-Ch TJ = 55°C Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25 oC ID = -250 µA, Referenced to 25 oC VDS = 20 V, VGS= 0 V, VDS =-20 V, VGS = 0 V, TJ = 55°C VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V 25 -25 25 -22 1 10 V mV/oC µA ∆BVDSS/∆TJ IDSS IDSS IGSS Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate - Body Leakage Current P-Ch N-Ch P-Ch -1 -10 100 -100 µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25 o C ID= -250 µA, Referenced to 25 o C VGS = 4.5 V, ID = 0.22 A TJ =125°C VGS = 2.7 V, ID = 0.19 A VGS = -4.5 V, ID = -0.41 A TJ =125°C VGS = -2.7 V, ID = -0.25 A N-Ch P-Ch N-Ch P-Ch N-Ch 0.65 -0.65 0.85 -0.82 -2.1 2.1 2.6 5.3 3.7 1.5 -1.5 V mV/ oC ∆VGS(th)/∆TJ RDS(ON) 4 7 5 1.1 1.9 1.5 Ω P-Ch 0.85 1.2 1.15 ID(ON) gFS On-State Drain Current Forward Transconductance VGS = 4.5 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VDS = 5 V, ID= 0.22 A VDS = -5 V, ID = -0.5 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.22 -0.41 0.2 0.9 9.5 62 6 34 1.3 10 A S DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz pF FDG6322C Rev.F Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type N-Ch P-Ch N-Ch P-Ch Min Typ Max Units tD(on) tr tD(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time N-Channel VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω P-Channel VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω N-Channel VDS= 5 V, ID = 0.22 A, VGS = 4.5 V P- Channel VDS = -5 V, ID = -0.41 A, VGS = -4.5 V 5 7 4.5 8 4 55 3.2 35 0.29 1.1 0.12 0.31 0.03 0.29 10 15 10 16 8 80 7 60 0.4 1.5 nS nS Turn - Off Delay Time Turn - Off Fall Time N-Ch P-Ch N-Ch P-Ch nS nS Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A VGS = 0 V, IS = -0.5 A 0.25 -0.25 0.8 -0.85 1.2 -1.2 A V (Note 2) (Note 2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA = 415OC/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6322C Rev.F Typical Electrical Characteristics: N-Channel 0.5 3.5V 3.0V 0.3 R DS(ON) , NORMALIZED 0.4 DRAIN-SOURCE ON-RESISTANCE I D, DRAIN-SOURCE CURRENT (A) VGS =4.5V 4.5 4 VGS = 2.5V 2.7V 3.0V 3.5V 0.2 3 2.5 4.0V 4.5V 5.0V 0.1 0 0 1 2 3 4 5 0 0.1 I D , DRAIN CURRENT (A) 0.3 0.4 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 20 V GS = 4.5V RDS(ON)ON-RESISTANCE(OHM) , I D = 0.22A ID = 0.10A 16 RDS(ON) , NORMALIZED 12 8 TA =125°C 4 25°C 0 1 2 3 4 5 VGS ,GATE TO SOURCE VOLTAGE (V) -25 0 J 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0.2 25°C 125°C I S , REVERSE DRAIN CURRENT (A) V DS = 5V I D , DRAIN CURRENT (A) 0.15 TJ = -55°C V 0.1 = 0V J 0.01 0.1 -55°C 0.05 0 0.5 0.0001 1 1.5 2 2.5 3 0 0.2 0.6 0.8 1.2 V , GATE TO SOURCE VOLTAGE (V) GS VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6 Voltage tion with Source Current and Temperature. FDG6322C Rev.F Typical Electrical Characteristics: N-Channel (continued) 6 V GS , GATE-SOURCE VOLTAGE (V) 30 I D = 0.22A 5 4 3 2 1 0 0 0.1 0.2 VDS = 5V 10V CAPACITANCE (pF) 15 Ciss 8 Coss 5 Crss 3 2 0.1 f = 1 MHz VGS = 0 V 0.3 1 3 10 25 V DS , DRAIN TO SOURCE VOLTAGE (V) 0.3 0.4 0.5 0.6 Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1 50 I D , DRAIN CURRENT (A) 0.3 RD POWER (W) S( O L N) IM IT 10m s 100 ms 1s 40 SINGLE PULSE R θJA=415°C/W TA= 25°C 30 0.1 10 0.03 s 20 V GS = 4.5V SINGLE PULSE RθJA = 415 °C/W T A = 25°C 0.8 2 5 DC 10 0.01 0.4 10 25 40 0 0.0001 0.001 0.01 0.1 1 10 200 VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDG6322C Rev.F Typical Electrical Characteristics: P-Channel 1.2 -ID , DRAIN-SOURCE CURRENT (A) 2.5 DRAIN-SOURCE ON-RESISTANCE VGS =-4.5V -3.0V 0.9 -2.7V R DS(ON) , NORMALIZED -2.5V 2 VGS = -2.0V 0.6 1.5 -2.5V -2.7V -3.0V -3.5V -4.5V -2.0V 0.3 1 -1.5V 0 0 1 2 3 4 -VDS , DRAIN-SOURCE VOLTAGE (V) 0.5 0 0.2 0.4 0.6 0.8 1 1.2 -I D , DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE 5 I D = -0.41A 1.4 R DS(ON) ,ON-RESISTANCE(OHM) I D = -0.2A 4 V GS = -4.5V R DS(ON) , NORMALIZED 1.2 3 1 2 TJ = 125 ° C 1 0.8 2 5° C 0 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. VDS = -5V -ID , DRAIN CURRENT (A) 0.8 TJ = -55°C 25°C 125°C -I S , REVERSE DRAIN CURRENT (A) 1 1 VGS = 0V 0.1 TJ = 125°C 25°C 0.6 0.01 -55°C 0.4 0.001 0.2 0 0.5 1 1.5 2 2.5 3 0.0001 0.2 0.4 0.6 0.8 1 1.2 -V , GATE TO SOURCE VOLTAGE (V) GS -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6322C Rev.F Typical Electrical Characteristics: P-Channel (continued) 5 -V GS , GATE-SOURCE VOLTAGE (V) 200 I D = -0.41A VDS = -5V -10V -15V CAPACITANCE (pF) 80 4 Ciss 30 3 Coss 2 10 5 1 3 0.1 f = 1 MHz V GS = 0 V 0.3 1 2 5 Crss 0 0 0.4 0.8 Q g , GATE CHARGE (nC) 1.2 1.6 10 25 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 3 50 -I D , DRAIN CURRENT (A) 1 0.5 S RD (O N) LI T MI 1m s 10 ms POWER (W) 40 10 0m s 1s SINGLE PULSE R θJA=415°C/W TA= 25°C 30 0.1 0.05 VGS = -4.5V SINGLE PULSE RθJA = 415°C A A = 25°C T 0.2 0.5 1 2 10 s DC 20 10 0.01 0.1 5 10 25 40 0 0.0001 0.001 0.01 0.1 1 10 200 - V DS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. FDG6322C Rev.F Typical Thermal Characteristics: N & P-Channel (continued) 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R θJA (t) = r(t) * R θJA R θJA =415 °C/W t1 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1/ t 2 0.002 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 200 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. FDG6322C Rev.F SC70-6 Tape and Reel Data and Package Dimensions SC70-6 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SC70-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains three reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Antistatic Cover Tape F63TNR Static Dissipative Label Embossed Carrier Tape 21 21 SC70-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 3,000 7" Dia 184x187x47 9,000 0.0055 0.1140 D87Z TNR 10,000 13" 343x343x64 30,000 0.0055 0.3960 21 21 21 Pin 1 SC70-6 Unit Orientation 343mm x 342mm x 64mm Intermediate box for D87Z Option F63TNR Barcode Label F63TNR Label F63TNR Label sample 184mm x 187mm x 47mm Pizza Box for Standard Option F63TNR Label LOT: CBVK741B019 FSID: FDG6302P QTY: 3000 SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 SC70-6 Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empty pockets Leader Tape 500mm minimum or 125 empty pockets August 1999, Rev. C SC70-6 Tape and Reel Data and Package Dimensions, continued SC70-6 Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SC70-6 (8mm) A0 2.24 +/-0.10 B0 2.34 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.20 +/-0.10 T 0.255 +/-0.150 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SC70-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 0.512 +0.020/-0.008 13 +0.5/-0.2 0.512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9 8mm 13" Dia July 1999, Rev. C SC70-6 Tape and Reel Data and Package Dimensions, continued SC70-6 (FS PKG Code 76) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0055 September 1998, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.