FDH5500_F085

FDH5500_F085 N-Channel UltraFET Power MOSFET October 2008 FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A Typ Qg(10) = 118nC at VGS = 10V Simulation Models -Temperature Compensated PSPICE and SABERTM Models Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature -TB334, “Guidelines for Soldering Surface Mount Componets to PC Boards“ Qualified to AEC Q101 RoHS Compliant Applications DC Linear Mode Control Solenoid and Motor Control Switching Regulators Automotive Systems ©2008 Fairchild Semiconductor Corporation FDH5500_F085 Rev. A1 1 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Drain to Source Voltage VDSS VDGR VGS ID EAS PD TL Tpkg Gate to Source Voltage Drain Current Continuous (TC < 135oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Dreate above 25oC Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) Max. Package Temp. for Soldering (Package Body for 10sec) (Note 2) Parameter (Note 1) (Note 1) Ratings 55 55 ±20 75 See Figure 4 864 375 2.5 -55 to + 175 300 260 o Units V V V A mJ W W/oC C Drain to Gate Voltage (RGS = 20kΩ) TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area 0.4 30 oC/W o C/W Package Marking and Ordering Information Device Marking FDH5500 Device FDH5500_F085 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 50V, VGS = 0V VDS = 45V VGS = ±20V TC = 150oC 55 1 250 ±100 V μA nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 75A, VGS= 10V 2 2.9 5.2 4 7 V mΩ Dynamic Characteristics Ciss Coss Crss Qg(TOT) Qg(10) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 20V Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 30V ID = 75A RL = 0.4Ω Ig = 1.0mA 3565 1310 395 206 118 6.2 17.8 51 268 153 8.1 pF pF pF nC nC nC nC nC FDH5500_F085 Rev. A1 2 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 75A, RL = 0.4Ω, VGS = 10V, RGS = 2.5Ω 13.7 102 34 22 185 91 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 75A IF = 75A, dISD/dt = 100A/μs 1 60 77 1.25 78 100 V ns nC Notes: 1: Starting TJ = 25oC to175oC. 2: Starting TJ = 25oC, L = 0.48mH, IAS = 60A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDH5500_F085 Rev. A1 3 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER 1.2 ID, DRAIN CURRENT (A) 180 150 120 90 60 30 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 CURRENT LIMITED BY PACKAGE VGS = 10V 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJC Figure 2. Maximum Continuous Drain Current vs Case Temperature 1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC 0.01 -5 10 SINGLE PULSE 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 1 10 IDM, PEAK CURRENT (A) 1000 I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability FDH5500_F085 Rev. A1 4 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 STARTING TJ = 25oC 10 1ms 10ms DC 10 STARTING TJ = 150oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 1 0.01 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 160 ID, DRAIN CURRENT (A) 160 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 5V VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 6V VGS = 5.5V ID, DRAIN CURRENT (A) 120 120 80 TJ = 175oC 80 VGS = 5V 40 TJ = 25oC TJ = -55oC 40 VGS = 4.5V 0 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics ID = 75A rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 75A VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 30 20 TJ = 175oC 10 TJ = 25 C o 0 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDH5500_F085 Rev. A1 5 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250μA 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 ID = 1mA NORMALIZED GATE THRESHOLD VOLTAGE 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 CAPACITANCE (pF) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 75A 8 VDD = 20V 6 4 2 0 VDD = 30V VDD = 40V Ciss 1000 Coss f = 1MHz VGS = 0V Crss 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 0 20 40 60 80 100 Qg, GATE CHARGE(nC) 120 140 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDH5500_F085 Rev. A1 6 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 FDH5500_F085 Rev. A1 7 www.fairchildsemi.com