FDI33N25

FDB33N25 / FDI33N25 250V N-Channel MOSFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G G S D -PAK FDB Series 2 GDS I -PAK FDI Series 2 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDB33N25 / FDI33N25 250 33 20.4 132 ±30 918 33 23.5 4.5 235 1.89 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA* RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Min. ---- Max. 0.53 40 62.5 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB33N25 / FDI33N25 Rev A FDB33N25 / FDI33N25 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDB33N25 FDI33N25 Device FDB33N25TM FDI33N25TU Package D2-PAK I2-PAK TC = 25°C unless otherwise noted Reel Size 330mm - Tape Width 24mm - Quantity 800 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA ID = 250μA, Referenced to 25°C VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 16.5A VDS = 40V, ID =16.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 250 -----3.0 ------ Typ. -0.25 -----0.077 26.6 1640 330 39 35 230 75 120 36.8 10 17 Max Units --1 10 100 -100 5.0 0.094 -2135 430 59 80 470 160 250 48 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 125V, ID = 33A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 200V, ID = 33A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 33A VGS = 0V, IS = 33A dIF/dt =100A/μs (Note 4) ------ ---220 1.71 33 132 1.4 --- A A V ns μC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 33A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB33N25 / FDI33N25 Rev A 2 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 1 150 C 25 C -55 C * Notes : 1. VDS = 40V 2. 250μs Pulse Test o o o 10 0 * Notes : 1. 250μs Pulse Test o 2. TC = 25 C -1 10 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] V GS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 10 2 RDS(ON) [Ω], Drain-Source On-Resistance VGS = 10V 0.15 IDR, Reverse Drain Current [A] 0.20 10 1 0.10 150 C 25 C o o VGS = 20V 0.05 * Note : TJ = 25 C o * Notes : 1. VGS = 0V 2. 250μs Pulse Test 0.00 0 20 40 60 80 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 12 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Crss = Cgd 10 VDS = 50V VDS = 125V VDS = 200V 3000 Coss Ciss 8 Capacitances [pF] 2000 6 4 1000 Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 33A 0 -1 10 0 10 0 10 1 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDB33N25 / FDI33N25 Rev A 3 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 16.5 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 10 2 10 μs 100 μs ID, Drain Current [A] 10 1 Operation in This Area is Limited by R DS(on) 10 ms 100 ms DC ID, Drain Current [A] 1 ms 30 20 10 0 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 10 -1 10 0 10 1 10 2 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 ZθJC(t), Thermal Response D =0.5 10 -1 0.2 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 10 -2 * N o te s : o 1 . Z θ JC (t) = 0 .5 3 C /W M ax. 2 . D u ty F a ctor, D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q uare W ave P ulse D uration [sec] FDB33N25 / FDI33N25 Rev A 4 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB33N25 / FDI33N25 Rev A 5 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDB33N25 / FDI33N25 Rev A 6 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Mechanical Dimensions D2-PAK FDB33N25 / FDI33N25 Rev A 7 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET Mechanical Dimensions I2-PAK 9.90 ±0.20 (0.40) 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 MAX 3.00 (1.46) 13.08 ±0.20 (0.94) 1.27 ±0.10 1.47 ±0.10 0.80 ±0.10 10.08 ±0.20 MAX13.40 (4 5° ) 2.54 TYP 2.54 TYP 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDB33N25 / FDI33N25 Rev A 8 www.fairchildsemi.com FDB33N25 / FDI33N25 250V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 FDB33N25 / FDI33N25 Rev A www.fairchildsemi.com