FDJ1027P_06

FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET August 2006 FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET Features ■ –2.8 A, –20 V RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V ■ Low gate charge, High Power and Current handling capability ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size General Description This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Applications ■ Battery management/Charger Application ■ Load switch S2 S1 G1 4 5 Bottom Drain Contact 3 2 1 S1 S2 G2 6 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg RθJA RθJC Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings –20 ±8 –2.8 –12 1.5 0.9 –55 to +150 Units V V A W °C °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 80 5 Package Marking and Ordering Information .G FDJ1027P 7" 8mm 3000 units ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDJ1027P Rev. C3 FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Symbol Off Characteristics BVDSS ∆BVDSS ∆ TJ IDSS IGSS VGS(th) ∆VGS(th) ∆ TJ RDS(on) Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –2.8 A VGS = –2.5 V, ID = –2.2 A VGS = –1.8 V, ID = –1.7 A VGS = –4.5 V, ID = –2.8 A, TJ = 125°C VDS = –5 V, ID = –2.8 A VDS = –10 V, VGS = 0 V, f = 1.0 MHz –0.4 –0.8 3 108 163 283 150 5 160 230 390 238 –20 –13 –1 ±100 V mV/°C µA nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance –1.5 V mV/°C mΩ gFS Ciss Coss Crss Rg Forward Transconductance S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance f = 1.0 MHz 290 55 29 13 pF pF pF Ω 16 23 23 32 4 ns ns ns ns nC nC nC Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 80°C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140°C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 8 13 13 18 VDS = –10 V, ID = –2.8 A, VGS = –4.5 V 3 0.65 0.75 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.25 A (Note 2) Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = –2.8 A, diF/dt = 100 A/µs –0.8 14 4 –1.25 –1.2 A V ns nC Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDJ1027P Rev. C3 www.fairchildsemi.com FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics 10 VGS=-4.5V 8 -2.5V 6 -3.5V 2.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V 2.4 V GS=-1.8V 2.2 2 -2.0V 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V -ID, DRAIN CURRENT (A) 4 -2.0V -1.8V 2 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) RDS(ON) , ON-RESISTANCE (OHM) 1.4 I D = -2.8A VGS = -4.5V I D = -1.4A 0.44 0.38 0.32 TA = 125°C 0.26 0.2 0.14 TA = 25°C 0.08 1.5 2 2.5 3 3.5 4 4.5 5 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 T A = -55°C 25 °C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS=0V 10 -ID , DRAIN CURRENT (A) 4 125 °C 3 1 TA = 125°C 0.1 25°C -55°C 0.001 0.0001 2 0.01 1 0 0.5 1 1.5 2 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDJ1027P Rev. C3 www.fairchildsemi.com FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics 5 500 ID = -2.8A 4 VDS = -5V -15V 3 -10V 400 f = 1 MHz VGS = 0 V CISS 300 -V GS, GATE-SOURCE VOLTAGE (V) 2 CAPACITANCE (pF) 200 COSS 100 CRSS 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 100 µs RDS(ON) LIMIT 10ms 1s DC VGS = -4.5V SINGLE PULSE RθJA = 140 o C/W T A = 25 oC 10s 1ms 100ms 8 SINGLE PULSE RθJA = 140°C/W T A = 25°C 6 1 4 0.1 2 0.01 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 R θJA(t) = r(t) * R θJA RθJA = 140 °C/W 0.2 P(pk) 0.1 0.1 t1 0.05 0.02 0.01 SINGLE PULSE t2 T J - T A = P * R θJA (t) Duty Cycle, D = t 1/t 2 0.01 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDJ1027P Rev. C3 www.fairchildsemi.com FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET Dimensional Outline and Pad Layout DRAIN 1 PKG C L 3 (0.24) (0.18) 0.30 MIN DRAIN 1 TERMINAL (0.73) (0.50) 0.84 0.20 PKG C L 0.60 DRAIN 2 1 6 PKG C L 4 0.30 0.20 PKG C L (0.46) 6 4 2.35 MIN 1.35 DRAIN 1 0.50 MIN 3 Bottom View 0.50 1.70 1.50 PKG C L 6 4 DRAIN 2 TERMINAL 1.00 A Recommended Landing Pattern B PKG C L 1.75 1.55 1 3 (0.20) 0.50 1.00 0.275 0.125 0.075 M A B 0.50 Top View 1.00 PKG C L 0.80 0.65 SEATING PLANE PKG C L 0.225 0.075 1.075 0.925 2.15 1.85 5 FDJ1027P Rev. C3 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20