FDJ1032C

FDJ1032C Complementary PowerTrench® MOSFET F June 2008 FDJ1032C Complementary PowerTrench® MOSFET Features ■ Q1 –2.8 A, –20 V. RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. ■ Q2 3.2 A, 20 V. ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size ■ RoHS Compliant Applications ■ DC/DC converter ■ Load switch ■ Motor Driving S2 S1 G1 5 6 4 Bottom Drain Contact 3 Q2 (N) 2 1 Q1 (P) Bottom Drain Contact S1 S2 G2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Q1 –20 ±8 –2.8 –12 1.5 0.9 –55 to +150 Q2 20 ±12 3.2 12 Units V V A W °C °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1a) 80 5 FDJ1032C Rev. B2(W) ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Package Marking and Ordering Information Device Marking .H Device FDJ1032C Reel Size 7" Tape width 8mm Quantity 3000 units Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage VGS = 0 V, ID = –250 µA VGS = 0 V, ID = 250 µA Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 –20 20 –13 13 –1 1 ±100 ±100 V mV/°C µA nA Parameter Test Conditions Type Min Typ Max Units Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V VDS = 16 V, VGS = 0 V Gate-Body Leakage VGS = ±8 V, VDS = 0 V VGS = ±12 V, VDS = 0 V VDS = VGS, ID = –250 µA VDS = VGS, ID = 250 µA ID = –250 µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VGS = –4.5 V, ID = –2.8 A VGS = –2.5 V, ID = –2.2 A VGS = –1.8 V, ID = –1.7 A VGS = –4.5 V, ID =2.8A, TJ = 125°C VGS = 4.5 V, ID = 3.2 A VGS = 2.5 V, ID = 2.7 A VGS = 4.5 V, ID = 3.2, TJ = 125°C On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆ TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 –0.4 0.6 –0.8 1.0 3 –3 108 163 283 150 70 100 83 5 7.5 160 230 390 238 90 130 132 S –1.5 1.5 V mV/°C mΩ Q2 gFS Forward Transconductance VDS = –5 V, ID = – 2.8 A VDS = 5 V, ID = 3.2 A Q1: VDS = –10 V, VGS = 0 V, f = 1.0 MHz Q2: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 290 200 55 50 29 30 14 3 8 7 13 8 13 11 18 2 16 14 23 16 23 20 32 4 pF pF pF Ω VGS = Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Q1: VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω Q2: VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Ω Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 ns ns ns ns 2 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Electrical Characteristics (Continued) Symbol Qg Qgs Qgd Parameter Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Q1: VDS = –10 V, ID = –2.8 A, VGS= –4.5V Q2: VDS = 10 V, ID = 3.2 A, VGS = 4.5 V Type Q1 Q2 Q1 Q2 Q1 Q2 Min Typ 3 2 0.65 0.4 0.75 1.0 Max Units 4 3 nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = –1.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) IF = –4.2A, dIF/dt = 100 A/µs IF = 5.9A, dIF/dt = 100 A/µs IF = –4.2A, dIF/dt = 100 A/µs IF = 5.9A, dIF/dt = 100 A/µs Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 –0.8 0.8 14 11 4 2.5 –1.25 1.25 –1.2 1.2 A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 80°C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140°C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q1 10 VGS=-4.5V 8 -2.5V 6 -3.5V 2.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V 2.4 V GS=-1.8V 2.2 2 -2.0V 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V -ID, DRAIN CURRENT (A) 4 -2.0V -1.8V 2 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) RDS(ON) , ON-RESISTANCE (OHM) 1.4 I D = -2.8A VGS = -4.5V I D = -1.4A 0.44 0.38 0.32 TA = 125°C 0.26 0.2 0.14 TA = 25°C 0.08 1.5 2 2.5 3 3.5 4 4.5 5 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 T A = -55°C 25 °C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS=0V 10 -ID , DRAIN CURRENT (A) 4 125 °C 3 1 TA = 125°C 0.1 25°C -55°C 0.001 0.0001 2 0.01 1 0 0.5 1 1.5 2 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDJ1032C Rev. B2(W) 4 www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q1 5 500 ID = -2.8A 4 VDS = -5V -15V 3 -10V 400 f = 1 MHz VGS = 0 V CISS 300 -V GS, GATE-SOURCE VOLTAGE (V) 2 CAPACITANCE (pF) 200 COSS 100 CRSS 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 100 µs RDS(ON) LIMIT 10ms 1s DC VGS = -4.5V SINGLE PULSE RθJA = 140 o C/W T A = 25 oC 10s 1ms 100ms 8 SINGLE PULSE RθJA = 140°C/W T A = 25°C 6 1 4 0.1 2 0.01 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDJ1032C Rev. B2(W) 5 www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q2 12 VGS = 4.5V 10 3.5V 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 2 VGS = 2.5V 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 12 I D, DRAIN CURRENT (A) 3.0V 3.5V 4.0V 4.5V I D, DRAIN CURRENT (A) 8 2.5V 6 4 2.0V 2 0 0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.28 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D = 3.2A VGS = 4.5V R DS(ON) , ON-RESISTANCE (OHM) I D = 1.6A 0.24 0.2 0.16 T A = 125°C 0.12 0.08 T A = 25° C -25 0 25 50 75 100 125 150 0.04 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( °C) Figure 13. On-Resistance Variation with Temperature. 10 10 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. I S, REVERSE DRAIN CURRENT (A) V DS = 5V VGS = 0V TA = -55 °C 25 °C 1 TA = 125 °C 0.1 25°C 0.01 -55°C 0.001 I D , DRAIN CURRENT (A) 8 125 °C 6 4 2 0 1 1.5 2 2.5 3 3.5 VGS , GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDJ1032C Rev. B2(W) 6 www.fairchildsemi.com .ngised draob tiucric eht no gnidneped egnahc lliw esnopser lamreht tneisnarT b1 etoN ni debircsed snoitidnoc eht gnisu demrofrep noitaziretcarahc lamrehT . .e vruC esnopseR lamrehT tneisnarT .12 erugiF ) ces 0001 001 01 1 ( EM T , I 1 t 1.0 10.0 100.0 ESLUP ELGNIS 10.0 20.0 50.0 1.0 2.0 2 t/1 t )t( AJ = D ,elcyC ytuD R * P = AT - JT 2t 1t )kp( 1.0 P I N AJ 1 . ita issi re i no p D woP m m x M l P lgn S 02 u i a es u e . eru giF 100.0 0 .aer A gn itare pO efaS mumixaM .91 erugiF NI ) 0001 001 01 ces ( EM T , I 1 t )V( EGATLOV ECRUOS- ARD ,SD V 1.0 10.0 001 01 1 1.0 10.0 1 2 4 s01 N I 6 8 N s m01 sm001 s1 1 s m1 sµ001 TIMIL )NO(SDR C°52 = AT W/C°041 = AJ R ESLUP ELGNIS θ 01 )W( REWOP T E S ART KAEP ,)kp(P 001 .scitsiretcarah Cn ec atica paC .81 erugiF 5 0 5.2 .scitsiretcarah Cg e rah C 1 eta G .71 eru giF 0 )V( EGATLOV ECRUOS OT ARD ,SDV NI 02 51 01 SSR C )Cn( EGRAHC ETAG ,gQ 0 05 2 5.1 5.0 0 1 2 SSO C 001 051 002 N I ) Fp ( EC AT CA P AC V51 V01 V5 = SD V A2.3 = DI 3 4 5 V 0 = SG V zHM1 = f 003 FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q2 )V( EGATLOV ECRUOS-ETAG ,SGV SSI C 052 )A( T ERRUC ARD ,D N NI CD Co 52 = AT W/C 041 = AJ R o ESLUP ELGNIS V5.4 = SGV θ 1.0 01 I EC ATS SER LAMREHT T E S ART EV TCEFFE DEZ LAMRO ,) ( N I N I I N W/ C° 041 = AJ R R * )t(r = )t(AJ R 5.0 = D tr FDJ1032C Rev. B2(W) 1000.0 10.0 7 www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Dimensional Outline and Pad Layout DRAIN 1 PKG C L 3 (0.24) (0.18) 0.30 0.20 PKG C L (0.46) DRAIN 1 6 4 (0.73) (0.50) DRAIN 2 PKG C L 0.30 MIN DRAIN 1 TERMINAL 0.20 0.84 PKG C L 0.60 0.50 MIN 2.35 MIN 1.35 6 4 Bottom View 1.70 1.50 PKG C L 6 4 A B PKG C L 1.75 1.55 1 3 0.50 1.00 1 3 DRAIN 2 TERMINAL (0.20) 0.50 1.00 0.275 0.125 0.075 M A B Recommended Landing Pattern Notes: Unless otherwise specified all dimensions are in millimeters. Top View PKG C L 0.80 0.65 0.225 0.075 PKG C L SEATING PLANE PKG 1.075 0.925 2.15 1.85 FDJ1032C Rev. B2(W) 8 www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDJ1032C Rev. B2(W) 9 www.fairchildsemi.com