FDJ128N

FDJ128N August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package Applications • Battery management S S G S S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ± 12 (Note 1a) Units V V A W °C 5.5 16 1.6 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range –55 to +150 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 77 °C/W Package Marking and Ordering Information Device Marking .B Device FDJ128N Reel Size 7’’ Tape width 8mm Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDJ128N Rev B2 W) FDJ128N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min 20 Typ Max Units V Off Characteristics ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V 12 1 ±100 0.6 1.0 –0.3 29 41 38 8 19 35 51 53 1.5 mV/°C µA nA VGS = ±12 V, VDS = 0 V VDS = VGS, ID = 250 µA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance V mV/°C mΩ A S ID = 250 µA,Referenced to 25°C VGS = 4.5 V, ID = 5.5 A VGS = 2.5 V, ID = 4.7 A VGS = 4.5 V, ID = 5.5,TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 5.5 A Dynamic Characteristics Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V G S = 0 V, 543 125 65 pF pF pF Ω 15 11 24 7 8 ns ns ns ns nC nC nC f = 1.0 MHz 2.0 Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 7 5 14 3 VDS = 10 V, VGS = 5 V ID = 5.5 A, 5 1.2 1.4 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode ForwardVoltage VGS = 0 V, IS = 1.3 A Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = 5.5 A, diF/dt = 100 A/µs (Note 2) 0.7 12 3 1.3 1.2 A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 77°C/W when mounted on a 1in2 pad of 2 oz copper. b) 115°C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDJ128N Rev B2 (W) FDJ128N Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=4.5V ID, DRAIN CURRENT (A) 8 3.5V 6 2.5V 2.0V 2.25 VGS = 2.0V 2 1.75 1.5 2.5V 1.25 1 0.75 1.25 1.5 0 2 4 6 8 10 ID, DRAIN CURRENT (A) 3.0V 3.5V 4 2 1.5V 0 0.25 0.5 0.75 1 4.0V 4.5V 0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.5A VGS = 10V 1.4 ID =2.75A 0.08 0.06 TA = 125 C o 1.2 0.04 TA = 25 C o 1 0.02 0.8 -50 -25 0 25 50 75 o 0 100 125 150 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 16 VDS = 5V ID, DRAIN CURRENT (A) 12 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 TA = 125 C 0.1 25 C 0.01 0.001 0.0001 -55 C o o o 8 TA = 125 C 4 -55 C 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) o o 25 C o 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDJ128N Rev B2 (W) FDJ128N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 8 CAPACITANCE (pF) VDS = 5V 10V 15V 800 f = 1MHz VGS = 0 V 600 Ciss 400 6 4 2 200 Crss Coss 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1 100µs 1ms 10ms 100ms 1s 10s DC 8 SINGLE PULSE RθJA = 115°C/W TA = 25°C 6 4 0.1 VGS = -4.5V SINGLE PULSE RθJA = 115oC/W TA = 25oC 2 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 115oC/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000 0.2 0.1 0.1 0.05 0.0 0.01 SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDJ128N Rev B2 (W) FDJ128N Dimensional Outline and Pad Layout FDJ128N Rev B2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11