FDLL914B

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode January 2007 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914 BLACK BROWN FDLL914A BLACK GRAY FDLL914B BROWN BLACK FDLL916 BLACK RED FDLL916A BLACK WHITE FDLL916B BROWN BROWN FDLL4148 BLACK BROWN FDLL4448 BROWN BLACK -1st band denotes cathode terminal and has wider width LL-34 DO-35 Cathode is denoted with a black band THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol VRRM IO IF if IFSM Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Tempera Value 100 200 300 400 1.0 4.0 -65 to + 175 -65 to + 175 Units V mA mA mA A A °C °C TSTG TJ * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient Parameter Max. 1N/FDLL 914/A/B / 4148 / 4448 500 300 Units mW °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Electrical Characteristics* Symbol VR VF Breakdown Voltage Forward Voltage TA=25°C unless otherwise noted Parameter Test Conditions IR = 100µA IR = 5.0µA Min. 100 75 620 630 Max. Units V V 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 IF = 5.0mA IF = 5.0mA IF = 10mA IF = 20mA IF = 20mA IF = 100mA VR = 20V VR = 20V, TA = 150°C VR = 75V VR = 0, f = 1.0MHz VR = 0, f = 1.0MHz IF = 10mA, VR = 6.0V (600mA) Irr = 1.0mA, RL = 100Ω 720 730 1.0 1.0 1.0 1.0 25 50 5.0 2.0 4.0 4.0 mV mV V V V V nA µA µA pF pF ns IR Reverse Leakage CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 Reverse Recovery Time trr * Non-recurrent square wave PW = 8.3ms Typical Characteristics 160 120 Ta=25 C o Ta= 25 C [nA] 100 o R [V] 150 R Reverse Voltage, V 80 Reverse Current, I 1 2 3 5 10 20 30 50 100 140 60 130 40 120 20 110 0 10 Reverse Current, IR [uA] Reverse Voltage, VR [V] 20 30 50 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100µA Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V 550 750 Ta= 25 C o Ta= 25 C o [mV] R 450 Forward Voltage, V Forward Voltage, V 400 350 300 250 F [mV] 500 700 650 600 550 500 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [uA] Forward Current, IF [mA] Figure 3. Forward Voltage vs Forward Current VF - 1 to 100µA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA 2 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Typical Characteristics 1.6 (Continued) 900 Ta= 25 C o Forward Voltage, V F [mV] [mV] 800 Typical Ta= -40 C o 1.4 1.2 Forward Voltage, V F 700 600 Ta= 25 C o 1.0 500 Ta= +65 C o 0.8 400 300 0.6 10 20 30 50 100 200 300 500 800 0.01 0.03 0.1 0.3 1 3 10 Forward Current, IF [mA] Forward Current, IF [mA] Figure 5. Forward Voltage vs Forward Current VF - 10 to 800mA Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (- 40 to +65°C) 0.90 4.0 TA = 25 C [ns] o Ta = 25 C 3.5 o Total Capacitance (pF) Reverse Recovery Time, t 0.85 0.80 0.75 0 2 4 6 8 10 12 14 rr 3.0 2.5 2.0 1.5 1.0 10 20 30 40 50 60 REVERSE VOLTAGE (V) Reverse Recovery Current, Irr [mA] IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms Figure 7. Total Capacitance Figure 8. Reverse Recovery Time vs Reverse Recovery Current 500 500 400 Power Dissipation, PD [mW] 400 DO-35 Current (mA) 300 300 200 IF( AV) 100 - AVE RAG E RE CTIF IED C URRE NT mA SOT-23 200 100 0 0 50 100 o 0 150 0 50 100 150 o 200 Ambient Temperature ( C) Temperature [ C] Figure 9. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA) Figure 10. Power Derating Curve 3 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 4 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 www.fairchildsemi.com