FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
January 2007
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench 20V, 10A, 23mΩ Features General Description
Max rDS(on) = 23mΩ at VGS = 4.5V, ID = 10A Max rDS(on) = 28mΩ at VGS = 2.5V, ID = 9A >2000V ESD protection Low Profile - 1mm maximum - in the new package MLP 3.3x3.3 mm RoHS Compliant
® MOSFET
tm
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced PowerTrench® process to optimize the rDS(on) @ VGS = 2.5V on special MLP lead frame with all the drains on one side of the package.
Application
Li-lon Battery Pack
D2
D2 D1 D1 D2 D2
5
4 G2
D2 6 D1
S2 G2
7 8
2 1
D1
S1
G1
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Rating 20 ±12 10 40 2.1 0.9 -55 to +150 Units V V A W °C
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 60 135 °C/W
Package Marking and Ordering Information
Device Marking 3300N Device FDM3300NZ Package Power 33 Reel Size 7” Tape Width 8mm Quantity 3000 units
©2006 Fairchild Semiconductor Corporation FDM3300NZ Rev.F
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www.fairchildsemi.com
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3 2
3
4
6 7 8
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S2 G1 S1
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V ID = 250μA, referenced to 25°C VDS = 16V, VGS = 0V VGS = ±12V, VDS= 0V 20 10.7 1 ±10 V mV/°C μA μA
On Characteristics
VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA ID = 250μA, referenced to 25°C VGS = 4.5V, ID = 10A VGS = 2.5V, ID = 9A VGS = 4.5V, ID = 10A, TJ = 125°C VDS = 5V, ID = 10A 0.6 0.9 -3 16 20 22 35 23 28 31 S mΩ 1.5 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance f = 1MHz VDS = 10V, VGS = 0V, f = 1MHZ 1210 330 180 2.3 1610 440 270 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 4.5V VDD = 10V ID = 10A VDD = 10V, ID = 1.0A VGS = 4.5V, RGEN = 6.0Ω 10 14 26 13 12 2 4 20 25 42 23 17 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.0A (Note 2) 0.7 20 6 1.2 V ns nC IF = 10A, di/dt = 100A/μs
Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. (b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper.
a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 135°C/W when mounted on a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
FDM3300NZ Rev.F
2
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FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
VGS = 4.5V
35
ID, DRAIN CURRENT (A)
VGS = 2.5V VGS = 3.0V VGS = 3.5V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
40
2.0 1.8
VGS = 2.0V
30 25 20 15 10 5 0 0.0 0.5
1.6 1.4 1.2 1.0
VGS = 3.5V
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = 2.5V VGS =3.0V
VGS = 2.0V
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX
VGS = 4.5V
1.0
1.5
2.0
0.8 0 5 10 ID, DRAIN CURRENT(A) 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
60
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8 0.6 -50
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX ID = 10A VGS = 4.5V
ID = 5.0A
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX
50 40
TJ = 125oC
30 20
TJ = 25oC
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC)
150
10
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction Temperature
40
Figure 4. On-Resistance vs Gate to Source Voltage
40
ID, DRAIN CURRENT (A)
PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX
IS, REVERSE DRAIN CURRENT (A)
10 1 0.1 0.01
VGS = 0V
30
VDD = 5V
TJ = 125oC TJ = 25oC
20
TJ = 125oC
10
TJ = 25oC TJ = -55oC
TJ = -55oC
1E-3 1E-4 0.0
0 0.0
0.5 1.0 1.5 2.0 2.5 VGS, GATE TO SOURCE VOLTAGE (V)
3.0
0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDM3300NZ Rev.F
3
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FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
5
ID = 10A
3000
VDD = 5V
CAPACITANCE (pF)
4 3 2 1
1000
Ciss
VDD = 10V
VDD = 15V
Coss Crss
100
f = 1MHz VGS = 0V
0 0 3 6 9 Qg, GATE CHARGE(nC) 12 15
60 0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
P(PK), PEAK TRANSIENT POWER (W)
500
VGS=10V
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ----------------------125 TA = 25oC
100
ID, DRAIN CURRENT (A)
rDS(on) LIMITED
10
100us 1ms
100
1
10ms 100ms
10
SINGLE PULSE o RθJA = 135 C/W
0.1
SINGLE PULSE TJ = MAX RATED RθJA = 135 C/W TA = 25oC
o
1s 10s DC
1
0.5 -4 10
0.01 0.1
1
10
60
10
-3
VDS, DRAIN to SOURCE VOLTAGE (V)
10 10 10 10 t, PULSE WIDTH (s)
-2
-1
0
1
10
2
10
3
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
2
1
NORMALIZED THERMAL IMPEDANCE, ZθJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE o RθJA = 135 C/W
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA
1E-3 -4 10
10
-3
10 10 10 t, RECTANGULAR PULSE DURATION(s)
-2
-1
0
10
1
10
2
10
3
Figure 11.
Transient Thermal Response Curve
FDM3300NZ Rev.F
4
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FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
FDM3300NZ Rev.F
5
www.fairchildsemi.com
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
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Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
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