FDMA1029PZ

FDMA1029PZ Dual P-Channel PowerTrench® MOSFET March 2008 FDMA1029PZ General Description tm Dual P-Channel PowerTrench® MOSFET Features • –3.1 A, –20V. RDS(ON) = 95 mΩ @ VGS = –4.5V RDS(ON) = 141 mΩ @ VGS = –2.5V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm • HBM ESD protection level > 2.5kV (Note 3) • RoHS Compliant This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 D2 When connected in the typical common source configuration, S1 G1 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 MicroFET 2x2 D2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –3.1 –6 1.4 0.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) °C/W Package Marking and Ordering Information Device Marking 029 ©2008 Fairchild Semiconductor Corporation Device Reel Size 7’’ Tape width 8mm Quantity 3000 units FDMA1029PZ Rev B2 (W) FDMA1029PZ FDMA1029PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = ± 12 V, VGS = 0 V VDS = 0 V Min Typ Max Units –20 –12 –1 ±10 –0.6 –1.0 4 60 88 87 –11 540 120 100 95 141 140 –1.5 V mV/°C µA µA V mV/°C mΩ Off Characteristics ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance ID = –250 µA VDS = VGS, ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –3.1 A VGS = –2.5 V, ID = –2.5 A VGS= –4.5 V, ID = –3.1 A, TJ=125°C VDS = –10 V, VDS = –10 V, f = 1.0 MHz ID = –3.1 A V G S = 0 V, gFS Ciss S pF pF pF 24 20 59 58 10 ns ns ns ns nC nC nC Dynamic Characteristics Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Output Capacitance Reverse Transfer Capacitance (Note 2) Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 13 11 37 36 VDS = –10 V, VGS = –4.5 V ID = –3.1 A, 7.0 1.1 2.4 FDMA1029PZ Rev B2 (W) FDMA1029PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics Symbol IS TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –1.1 A V ns nC Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current VGS = 0 V, IS = –1.1 A IF = –3.1 A, dIF/dt = 100 A/µs VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge (Note 2) –0.8 25 9 –1.2 Notes: 2 1. RθJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDMA1029PZ Rev B2 (W) FDMA1029PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics 6 5 -ID, DRAIN CURRENT (A) 4 3 2 1 0 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4 5V 3.5V 3.0V 2.6 2.5V 2.0V 2.2 VGS = -2.0V 1.8 1.4 -2.5V -3.0V -3.5V -4.0V 1 -4.5V 1.5V 0.4 0.8 1.2 1.6 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.6 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 ID = -3.1A VGS = -4.5V ID = -1.55A 0.16 0.12 TA = 125 C o 0.08 T A = 25 C o 0.04 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 6 VDS = -5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 TA = 125oC 25oC -55 C o 5 -ID, DRAIN CURRENT (A) 4 3 2 1 25oC TA = 125 C o -55 C o 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1029PZ Rev B2 (W) FDMA1029PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics 1000 ID = -3.1A f = 1MHz VGS = 0 V 800 -15V -10V CAPACITANCE (pF) VDS = -5V 10 -VGS, GATE-SOURCE VOLTAGE (V) 8 6 600 Ciss 400 Coss Crss 4 2 200 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 50 Figure 8. Capacitance Characteristics. 10 RDS(ON) LIMIT 10ms 100ms 1ms 100us P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 40 SINGLE PULSE RθJA = 173°C/W TA = 25°C 1 DC 10s 1s 30 0.1 VGS = -4.5V SINGLE PULSE o RθJA = 173 C/W TA = 25oC 20 10 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA =173 °C/W P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 t1 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1029PZ Rev B2 (W) FDMA1029PZ Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ` rev3 FDMA1029PZ Rev B2 (W) FDMA1029PZ Dual P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device `or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDMA1029PZ Rev B2 (W) Preliminary First Production No Identification Needed Obsolete Full Production Not In Production