FDMA1032CZ

FDMA1032CZ 20V Complementary PowerTrench® MOSFET May 2006 FDMA1032CZ 20V Complementary PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It • Q2: P-Channel –3.1 A, –20V. RDS(ON) = 95 mΩ @ VGS = –4.5V RDS(ON) = 141 mΩ @ VGS = –2.5V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm • RoHS Compliant features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. PIN 1 S1 G1 D1 D2 D2 Features • Q1: N-Channel 3.7 A, 20V. RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V S1 G1 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 MicroFET 2x2 D2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Q1 20 ±12 (Note 1a) Q2 –20 ±12 –3.1 –6 1.4 0.7 –55 to +150 Units V V A W °C 3.7 6 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) °C/W Package Marking and Ordering Information Device Marking 032 ©2006 Fairchild Semiconductor Corporation Device FDMA1032CZ Reel Size 7’’ Tape width 8mm Quantity 3000 units FDMA1032CZ Rev B (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = 250 µA VGS = 0 V, ID = –250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 0 V VDS = –16 V, VGS = ±12 V, VDS = 0 V ID = 250 µA VDS = VGS, ID = –250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS = 4.5 V, ID = 3.7 A, TJ = 125°C VGS = –4.5V, ID = –3.1 A VGS = –2.5 V, ID = –2.5 A VGS = –4.5 V, ID = –3.1 A,TJ = 125°C VDS = 10 V, ID = 3.7 A ID = –3.1 A VDS = –10 V, Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = –10 V, VGS = 0 V, f = 1.0 MHz Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 All 20 –20 15 –12 1 –1 ±10 V mV/°C µA µA Off Characteristics On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 0.6 –0.6 1.0 –1.0 –4 4 37 50 53 60 88 87 16 –11 340 540 80 120 60 100 1.5 –1.5 V mV/°C 68 86 90 95 141 140 mΩ Q2 mΩ gFS Forward Transconductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance pF pF pF FDMA1032CZ Rev B (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Electrical Characteristics Symbol Parameter (Note 2) TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω Q2 VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω Q1 VDS = 10 V, ID = 3.7 A, VGS = 4.5 V Q2 VDS = –10 V,ID =– 3.1 A, VGS =– 4.5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 13 8 11 14 37 3 36 4 7 0.7 1.1 1.1 2.4 16 24 16 20 26 59 6 58 6 10 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.1 A (Note 2) VGS = 0 V, IS = –1.1 A (Note 2) Q1 IF = 3.7 A, dIF/dt = 100 A/µs Q2 IF = –3.1 A, dIF/dt = 100 A/µs 0.7 –0.8 11 25 2 9 1.1 –1.1 1.2 –1.2 A V ns nC Notes: 2 1. RθJA is determined with the device mounted on a 1 in pad of 2 oz. copper on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDMA1032CZ Rev B (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics Q1 (N-Channel) 6 VGS = 4.5V 2.5V 2.0V 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 2.0V 5 ID, DRAIN CURRENT (A) 3.5V 3.0V 1.8 1.6 1.4 2.5V 4 3 2 1 1.5V 1.2 1 0.8 3.0V 3.5V 4.0V 4.5V 0 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.2 0 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.13 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 ID = 3.7A VGS = 4.5V ID = 1.85A 0.11 0.09 0.07 TA = 125 C o 0.05 T A = 25 C o 0.03 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 6 IS, REVERSE DRAIN CURRENT (A) VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 5 ID, DRAIN CURRENT (A) 4 3 2 TA = 125 C o 10 1 0.1 TA = 125oC 0.01 25 C o -55oC o 1 25 C 0.001 -55 C o 0 0.5 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) 1 2.5 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1032CZ Rev B (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics Q1 (N-Channel) 10 VGS, GATE-SOURCE VOLTAGE (V) 500 ID = 3.7A VDS = 5V 15V f = 1MHz VGS = 0 V 8 400 CAPACITANCE (pF) 10V 6 300 Ciss 4 200 Coss 2 100 Crss 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RθJA = 173°C/W TA = 25°C ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC VGS = 4.5V SINGLE PULSE RθJA = 173°C/W TA = 25°C 40 30 1 20 0.1 10 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =173 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1032CZ Rev B (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) 6 5 -ID, DRAIN CURRENT (A) 4 3 2 1 1.5V 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4 5V 3.5V 3.0V 2.5V 2.0V 2.2 VGS = -2.0V 1.8 1.4 -2.5V -3.0V -3.5V 1 -4.0V -4.5V 0 0 0.4 0.8 1.2 1.6 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.6 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 ID = -3.1A VGS = -4.5V ID = -1.55A 0.16 0.12 TA = 125 C o 0.08 T A = 25 C o 0.04 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 14. On-Resistance Variation with Temperature. 6 VDS = -5V Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 5 -ID, DRAIN CURRENT (A) 4 3 2 TA = 125oC -55oC -IS, REVERSE DRAIN CURRENT (A) 10 1 TA = 125oC o 0.1 0.01 25 C -55 C o 1 25oC 0.001 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1032CZ Rev B (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.1A 1000 f = 1MHz VGS = 0 V 800 -15V 8 CAPACITANCE (pF) VDS = -5V 6 -10V 600 Ciss 400 Coss 4 2 200 Crss 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 18. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 19. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 40 SINGLE PULSE RθJA = 173°C/W TA = 25°C 10 RDS(ON) LIMIT 1ms 10ms 100ms 10s DC VGS = -4.5V SINGLE PULSE o RθJA = 173 C/W TA = 25oC 1s 100us 30 1 20 0.1 10 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =173 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDMA1032CZ Rev B (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET FDMA1032CZ Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ i-Lo™ E2CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production