FDMA2002NZ

May 2006 May 2006 FDMA2002NZ Dual N-Channel PowerTrench® MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS(ON) = 140 mΩ @ VGS = 3.0 V RDS(ON) = 163 mΩ @ VGS = 2.5 V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm • RoHS Compliant PIN 1 S1 G1 D1 D2 D2 S1 G1 D2 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 ±12 2.9 2.7 10 (Note 1a) (Note 1b) Units V V A Drain Current – Continuous (TC = 25°C, VGS = 4.5V) – Continuous (TC = 25°C, VGS = 2.5V) – Pulsed PD TJ, TSTG Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Temperature 1.5 0.65 –55 to +150 W °C Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 83 (Single Operation) 193 (Single Operation) 68 (Dual Operation) 145 (Dual Operation) °C/W Package Marking and Ordering Information Device Marking 002 ©2006 Fairchild Semiconductor Corporation Device FDMA2002NZ Reel Size 7’’ Tape width 8mm Quantity 3000 units FDMA2002NZ Rev B(W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage Current Test Conditions ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 12 V, VGS = 0 V VDS = 0 V Min Typ Max Units 30 25 1 ±10 V mV/°C µA µA Off Characteristics On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85°C VGS = 3.0V, ID = 2.7A, TC = 150°C VGS = 2.5V, ID = 2.5A, TC = 150°C 0.4 1.0 –3 75 84 92 95 138 150 123 140 163 166 203 268 1.5 V mV/°C RDS(on) Static Drain–Source On–Resistance mΩ Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V G S = 0 V, 190 30 20 220 40 30 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 6 8 12 2 12 16 21 10 3.0 ns ns ns ns nC nC nC VDS = 15 V, VGS = 4.5 V ID = 2.9 A, 2.4 0.35 0.75 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/µs 0.9 0.8 10 2 2.9 1.2 1.2 A V ns nC FDMA2002NZ Rev B(W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Notes: 2 1. RθJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper (d) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 68°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB a) 83oC/W when mounted on a 1in2 pad of 2 oz copper b) 193oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDMA2002NZ Rev B(W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5V 1.8 VGS = 2.0V ID, DRAIN CURRENT (A) 8 3.5V 1.6 2.7V 2.9V 2.0V 6 1.4 4 1.2 2.5V 2.7V 2.9V 3.5V 4.0V 4.5V 2 1.5V 1 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.8 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 2.9A VGS = 4.5V ID = 1.45A 0.2 0.16 TA = 125 C o 0.12 0.08 T A = 25 C o 0.04 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 10 125 C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C o VGS = 0V o ID, DRAIN CURRENT (A) 8 25oC 10 1 6 0.1 TA = 125 C 25oC -55oC o 4 0.01 2 0.001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA2002NZ Rev B(W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 2.9A 300 f = 1MHz VGS = 0 V 250 8 CAPACITANCE (pF) VDS = 10V 20V 200 Ciss 6 15V 150 4 100 Coss 2 50 Crss 0 0 1 2 3 4 Qg, GATE CHARGE (nC) 5 6 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 15 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 12 SINGLE PULSE RθJA = 193°C/W TA = 25°C 10 RDS(ON) LIMIT 100us 10ms 1ms 100ms 1s 9 1 10s DC VGS = 4.5V SINGLE PULSE o RθJA = 193 C/W TA = 25 C o 6 0.1 3 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =193°C/W P(pk) t1 t2 SINGLE PULSE 0.2 0.1 0.1 0.05 0.02 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA2002NZ Rev B(W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET FDMA2002NZ Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ i-Lo™ E2CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production