FDMA291P_08

FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET June 2008 FDMA291P tm Single P-Channel 1.8V Specified PowerTrench® MOSFET General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features • –6.6 A, –20V. rDS(ON) = 42 mΩ @ VGS = –4.5V rDS(ON) = 58 mΩ @ VGS = –2.5V rDS(ON) = 98 mΩ @ VGS = –1.8V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm RoHS Compliant Pin 1 Drain D D G Source Bottom Drain Contact D1 D2 G3 6D 5D 4S D D S MicroFET 2x 2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –6.6 –24 2.4 0.9 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 291 Device Reel Size 7’’ FDMA291P Tape width 8mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = ± 8 V, VGS = 0 V VDS = 0 V Min Typ Max Units –20 –12 –1 ±100 –0.4 –0.7 3 36 51 79 49 16 1000 190 100 42 58 98 64 –1.0 V mV/°C µA nA V mV/°C mΩ Off Characteristics ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ rDS(on) On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA VDS = VGS, ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –6.6 A VGS = –2.5 V, ID = –5.1 A VGS = –1.8 V, ID = –3.9 A VGS= –4.5 V, ID = –6.6 A, TJ=125°C VDS = –5 V, VDS = –10 V, f = 1.0 MHz ID = –6.6 A V G S = 0 V, gFS Ciss Forward Transconductance Input Capacitance S pF pF pF 23 18 68 40 14 ns ns ns ns nC nC nC –2 A V ns nC Dynamic Characteristics Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS Output Capacitance Reverse Transfer Capacitance (Note 2) Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 13 9 42 25 VDS = –10 V, VGS = –4.5 V ID = –6.6 A, 10 2 3 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = –2 A IF = –6.6 A, dIF/dt = 100 A/µs VSD trr Qrr (Note 2) –0.8 20 8 –1.2 Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. 2 (a) RθJA = 52°C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics 24 20 -ID, DRAIN CURRENT (A) 16 12 8 4 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) 5 -2.5V 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 VGS = -1.8V -4.0V -3.5V -2.0V -1.8V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V 4 8 12 16 -ID, DRAIN CURRENT (A) 20 24 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -6.6A VGS = -10V ID = -3.3A 1.4 0.12 1.2 0.09 TA = 125 C o 1 0.06 TA = 25oC 0.8 0.03 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 24 VDS = -10V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 0.0001 VGS = 0V 20 -ID, DRAIN CURRENT (A) TA = -55oC 125oC 16 12 8 4 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) 4 25 C o TA = 125 C 25oC -55oC o 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics 1600 ID = -6.6A VDS = -5V -15V f = 1MHz VGS = 0 V 10 -VGS, GATE-SOURCE VOLTAGE (V) 8 -10V 6 CAPACITANCE (pF) 1200 Ciss 800 4 2 400 Crss Coss 0 0 4 8 12 16 Qg, GATE CHARGE (nC) 20 24 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 1000 100 -ID, DRAIN CURRENT (A) 10 1 0.1 0.01 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics. SINGLE PULSE RθJA = 145°C/W TA = 25°C 80 60 10s DC VGS = -10V SINGLE PULSE RθJA = 145oC/W T A = 25 C o 40 20 0.001 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 1000 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) * RθJA RθJA =145 °C/W P(pk) 0.01 SINGLE PULSE 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 t1 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V specified PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMA291P Rev. B3 FDMA291P Single P-Channel 1.8 V Specified PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMA291P Rev. B3 6 www.fairchildsemi.com