FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
FDMA420NZ
Single N-Channel 2.5V Specified 20V, 5.7A, 30mΩ
General Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
April 2008
PowerTrench® MOSFET
Features
RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A
tm
Applications
Li-lon Battery Pack
Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm HBM ESD protection level > 2.5k V typical (Note 3) RoHS Compliant
Pin 1
D
D
G Source S D D
4 3
Drain
G D D
5
2
6
1
D
D
S
Bottom Drain Contact
MicroFET Bottom View 2X2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±12 5.7 24 0.9 2.4 -55 to +150 Units V V A W
o
Power dissipation (Steady State) Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 145 52
o
C/W
Package Marking and Ordering Information
Device Marking 420 Device FDMA420NZ Reel Size 7”
1
Tape Width 12mm
Quantity 3000 units
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©2008 Fairchild Semiconductor Corporation FDMA420NZ Rev B2
FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0V , ID = 250µA ID = 250µA, Referenced to 25°C VDS = 16V, VGS = 0V, VGS = ±12V, VDS = 0V 20 12 1 ±10 V mV/°C µA µA
On Characteristics (Note 2)
VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250µA ID = 250µA, Referenced to 25°C VGS = 4.5V, ID = 5.7A VGS = 4.0V, ID = 5.7A RDS(ON) Static Drain-Source On-Resistance VGS = 3.1V, ID = 5.0A VGS = 2.5V, ID = 5.0A VGS = 4.5V, TJ =150°C gFS Forward Transconductance VDS = 5V, ID = 5.7A, ID = 5.7A 0.6 0.83 -3.1 16.8 17.3 18.9 21.2 24.8 28.3 30 31 33 40 44 S mΩ 1.5 V mV/°C
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1.0MHz f = 1.0MHz 701 163 125 1.92 935 220 190 pF pF pF Ω
Switching Characteristics (Note 2)
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10V, ID = 5.7A, VGS = 4.5V VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω 9.8 8.6 21.5 8.6 8.8 0.9 2.4 20 18 43 18 12 2 4 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 145°C/W when mounted on a minimum pad of 2 oz copper. b. 52°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = 2.0A IF = 5.7A, di/dt = 100A/µs 0.69
2.0 1.2 20 5
A V ns nC
FDMA420NZ Rev B2
2
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FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX
VGS = 4.5V VGS = 3.5V VGS = 3.0V VGS = 2.0V VGS = 1.5V VGS = 2.5V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
50 45
ID, DRAIN CURRENT (A)
2.1
PULSE DURATION = 300µS DUTY CYCLE = 2.0%MAX
40 35 30 25 20 15 10 5 0 0 1
1.8
VGS = 2.0V VGS = 3.0V VGS = 2.5V
1.5
VGS = 3.5V
1.2
VGS = 4.5V
2
3
4
0.9
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. On-Resistance vs Drain Current and Gate Voltage
60
RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mΩ)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8 0.6 -80
ID = 5.7A VGS = 4.5V
50 40 30 20 10
PULSE DURATION = 300µS DUTY CYCLE = 2.0%MAX
ID = 2.8A
TJ = 125oC
TJ = 25oC
-40
0
40
80
120
160
1
TJ, JUNCTION TEMPERATURE (oC)
2 3 4 VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 3. Normalized On Resistance vs Junction Temperature
30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0.5
PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX
Figure 4. On-Resistance vs Gate to Source Votlage
100
IS, REVERSE DRAIN CURRENT (A)
10 1 0.1 0.01 1E-3 1E-4 0.2
VGS = 0V
VDS = 5V TJ = 125oC TJ = 25oC TJ = -55oC
TJ = 125oC TJ = 25oC
TJ = -55oC
1.0
1.5
2.0
2.5
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
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FDMA420NZ Rev B2
FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
5 4 3 2 1 0
VDS = 15V VDS = 20V VDS = 25V
2000 1000
CAPACITANCE (pF)
Ciss
Coss
100 50 0.1
f = 1MHz VGS = 0V
Crss
0
2 4 6 Qg, GATE CHARGE(nC)
8
10
12
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain to Source Voltage
6
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10us
5 4 3 2 1 0 25
VGS = 4.5V
10
100us 1ms
OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) SINGLE PULSE TJ=MAX RATED TA=25oC
1
10ms 100ms 1s 10s DC
VGS = 2.5V
0.1
0.01 0.1
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
50
50 75 100 125 TA, AMBIENT TEMPERATURE(oC)
150
Figure 9. Forward Bias Safe Operating Area
200
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Maximum Continuous Drain Current vs Ambient Temperature
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I= I 150 – T 25 125 A --------------------
100
VGS = 10V
10
SINGLE PULSE
1 0.5 -4 10 10
-3
10
-2
10 t, PULSE WIDTH (s)
-1
10
0
10
1
10
2
10
3
Figure 11. Single Pulse Maximum Power Dissipation
FDMA420NZ Rev B2
4
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FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01
1
Normalized Thermal Impedance, ZθJA
PDM
0.1
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 145oC
SINGLE PULSE
0.01 -4 10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION(s)
Figure 12. Transient Thermal Response Curve
FDMA420NZ Rev B2
5
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FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMA420NZ Rev B2
6
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FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ *
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDMA420NZ Rev B2
7
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