FDMA530PZ

FDMA530PZ Single P-Channel PowerTrench® MOSFET April 2008 FDMA530PZ Single P-Channel PowerTrench MOSFET –30V, –6.8A, 35mΩ Features General Description Max rDS(on) = 35mΩ at VGS = –10V, ID = –6.8A Max rDS(on) = 65mΩ at VGS = –4.5V, ID = –5.0A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3k V typical (Note 3) RoHS Compliant ® tm This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 D D G Bottom Drain Contact Drain Source D D G 1 6 D D S 2 5 3 4 D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –30 ±25 –6.8 –24 2.4 0.9 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 530 Device FDMA530PZ Package MicroFET 2X2 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDMA530PZ Rev.B1 1 www.fairchildsemi.com FDMA530PZ Single P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = –250μA, VGS = 0V ID = –250μA, referenced to 25°C VDS = –24V, VGS = 0V VGS = ±25V, VDS = 0V –30 –23 -1 ±10 V mV/°C μA μA On Characteristics VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = –250μA ID = –250μA, referenced to 25°C VGS = –10V, ID = –6.8A VGS = –4.5V, ID = –5.0A VGS = –10V, ID = –6.8A ,TJ = 125°C VDS = –10V, ID = –6.8A –1 –2.1 5.4 30 52 43 17 35 65 63 S mΩ –3 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = –15V, VGS = 0V, f = 1MHz 805 155 130 1070 210 195 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = –10V VGS = –5V VDD = –15V ID = –6.8A VDD = –15V, ID = –6.8A VGS = –10V, RGEN = 6Ω 6 21 43 31 16 9 3.1 4.5 12 34 69 50 24 11 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = –2A IF = –6.8A, di/dt = 100A/μs –0.8 24 19 –2 –1.2 36 29 A V ns nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 52°C/W when mounted on a 1 in2 pad of 2 oz copper b.145°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA530PZ Rev.B1 2 www.fairchildsemi.com FDMA530PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 24 20 16 12 8 4 0 0 VGS = - 3.5V VGS = - 4.5V VGS = -10V VGS = - 5.0V VGS = - 4.0V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 4 VGS = -3.5V VGS = -4.0V VGS = -4.5V VGS = -5.0V -ID, DRAIN CURRENT (A) VGS = -10V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 8 12 16 -ID, DRAIN CURRENT(A) 20 24 Figure 1. On-Region Characteristics 1.8 1.6 1.4 1.2 1.0 0.8 -50 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = -3.4A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -6.8A VGS = -10V 150 100 TJ = 125oC 50 TJ = 25oC -25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VDD= -5V Figure 4. On-Resistance vs Gate to Source Voltage -IS, REVERSE DRAIN CURRENT (A) 30 VGS = 0V 24 -ID, DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 18 TJ = 125oC TJ = 25oC 12 TJ = 125oC TJ = -55oC TJ = 25oC 6 TJ = -55oC 0 1 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 2 6 0.0001 0.0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMA530PZ Rev.B1 3 www.fairchildsemi.com FDMA530PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 ID = -6.8A VDD = -10V VDD = -15V VDD = -20V 2000 1000 CAPACITANCE (pF) Ciss Coss 100 50 0.1 f = 1MHz VGS = 0V Crss 0 3 6 9 12 Qg, GATE CHARGE(nC) 15 18 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics 1E-3 -ID, DRAIN CURRENT (A) Figure 8. Capacitance vs Drain to Source Voltage 60 -Ig, GATE LEAKAGE CURRENT(A) 1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 0 VGS = 0V rDS(on) LIMIT 10 100us TJ = 125oC 1 VGS= -4.5V θJA =145 o 1ms 10ms 100ms 1s 10s DC TJ = 25oC 0.1 SINGLE PULSE R C/W o TA = 25 C 5 10 15 20 25 30 35 0.01 0.1 1 10 100 -VGS, GATE TO SOURCE VOLTAGE(V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area 2 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 150 120 90 60 30 0 -4 10 SINGLE PULSE o RθJA = 145 C/W TA=25 C o 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM SINGLE PULSE t1 t2 10 -3 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 0.01 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 11. Single Pulse Maximum Power Dissipation Figure 12. Transient Thermal Response Curve FDMA530PZ Rev.B1 4 www.fairchildsemi.com FDMA530PZ Single P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMA530PZ Rev.B1 5 www.fairchildsemi.com FDMA530PZ Single P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMA530PZ Rev.B1 6 www.fairchildsemi.com