FDMS7672AS

FDMS7672AS N-Channel PowerTrench® SyncFETTM September 2009 FDMS7672AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Top Bottom S S Pin 1 S D D D 5 6 7 8 4G 3 2 1 G S S S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID dv/dt EAS PD TJ, TSTG MOSFET dv/dt Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) (Note 4) Ratings 30 ±20 42 83 19 90 2.6 60 46 2.5 -55 to +150 V/ns mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.7 50 °C/W Package Marking and Ordering Information Device Marking FDMS7672AS Device FDMS7672AS Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com ©2009 Fairchild Semiconductor Corporation FDMS7672AS Rev.C FDMS7672AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 1 mA, VGS = 0 V ID = 10 mA, referenced to 25 °C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 18 500 100 V mV/°C µA nA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 1 mA ID = 10 mA, referenced to 25 °C VGS = 10 V, ID = 18 A Static Drain to Source On Resistance VGS = 7 V, ID = 16 A VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 18 A, TJ = 125 °C Forward Transconductance VDS = 5 V, ID = 18 A 1.2 1.9 -5 3.2 3.5 4.3 4.1 97 4.0 4.5 5.2 5.2 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2120 735 90 1.1 2820 975 135 2.2 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 1 8 A VDD = 15 V, ID = 18 A, VGS = 10 V, RGEN = 6 Ω 12 5 28 4 33 15 6.5 4.0 21 10 44 10 46 22 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2 A VGS = 0 V, IS = 18 A (Note 2) (Note 2) 0.48 0.80 26 26 0.9 1.3 42 42 V ns nC IF = 18 A, di/dt = 300 A/µs Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7672AS Rev.C 2 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 90 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 12 VGS = 3 V 10 8 VGS = 3.5 V 60 VGS = 10 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 6 4 2 0 VGS = 4 V VGS = 10 V VGS = 4.5 V 30 VGS = 3 V 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 0 30 60 90 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 12 SOURCE ON-RESISTANCE (mΩ) 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1.0 0.9 0.8 ID = 18 A VGS = 10 V ID = 18 A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 10 8 6 4 2 TJ = 25 oC rDS(on), DRAIN TO TJ = 125 oC 0.7 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 90 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0 V 10 TJ = 125 oC ID, DRAIN CURRENT (A) 60 VDS = 5 V 1 0.1 0.01 TJ = 25 oC TJ = 125 oC 30 TJ = 25 oC TJ = -55 oC TJ = -55 oC 0 1 2 3 4 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7672AS Rev.C 3 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 18 A 3000 Ciss CAPACITANCE (pF) VDD = 10 V VDD = 20 V VDD = 15 V 8 6 4 2 0 1000 Coss 100 50 0.1 f = 1 MHz VGS = 0 V Crss 0 5 10 15 20 25 30 35 1 10 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 90 ID, DRAIN CURRENT (A) 30 IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC 60 VGS = 10 V TJ = 100 oC 30 Limited by Package RθJC = 2.7 C/W o VGS = 4.5 V TJ = 125 oC 1 0.01 0.1 1 10 100 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 300 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 P(PK), PEAK TRANSIENT POWER (W) 100 µs 1000 VGS = 10 V 10 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms 1s 10 s DC 100 1 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC 10 SINGLE PULSE RθJA = 125 oC/W 0.01 0.01 0.1 1 10 100200 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS7672AS Rev.C 4 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 SINGLE PULSE RθJA = 125 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -2 0.0001 -4 10 10 -3 10 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7672AS Rev.C 5 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7672AS. 20 IDSS, REVERSE LEAKAGE CURRENT (A) Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 10 -2 TJ = 125 oC 15 CURRENT (A) di/dt = 300 A/µs 10 -3 TJ = 100 oC 10 5 0 -5 10 -4 TJ = 25 oC 10 -5 0 30 60 TIME (ns) 90 120 150 10 -6 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMS7672AS SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverses leakage versus drain-source voltage FDMS7672AS Rev.C 6 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout FDMS7672AS Rev.C 7 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ FPS™ PowerTrench® The Power Franchise® Auto-SPM™ F-PFS™ PowerXS™ ® Build it Now™ FRFET® Programmable Active Droop™ SM ® Global Power Resource CorePLUS™ QFET TinyBoost™ Green FPS™ QS™ CorePOWER™ TinyBuck™ Green FPS™ e-Series™ Quiet Series™ CROSSVOLT™ TinyCalc™ Gmax™ RapidConfigure™ CTL™ TinyLogic® GTO™ Current Transfer Logic™ ® TINYOPTO™ IntelliMAX™ EcoSPARK ™ TinyPower™ ISOPLANAR™ EfficentMax™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ MegaBuck™ EZSWITCH™* SmartMax™ TinyWire™ ™* MICROCOUPLER™ SMART START™ TriFault Detect™ MicroFET™ SPM® TRUECURRENT™* MicroPak™ STEALTH™ ® MillerDrive™ SuperFET™ Fairchild® MotionMax™ SuperSOT™-3 Fairchild Semiconductor® Motion-SPM™ SuperSOT™-6 UHC® ® FACT Quiet Series™ Ultra FRFET™ OPTOLOGIC SuperSOT™-8 FACT® OPTOPLANAR® UniFET™ SupreMOS™ ® FAST® VCX™ SyncFET™ FastvCore™ VisualMax™ Sync-Lock™ FETBench™ XS™ ®* PDP SPM™ FlashWriter® * Power-SPM™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 FDMS7672AS Rev.C 8 www.fairchildsemi.com