FDMS7680 N-Channel PowerTrench® MOSFET
April 2009
FDMS7680
N-Channel PowerTrench® MOSFET
30 V, 6.9 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. MSL1 robust package design 100% UIL tested RoHS Compliant
Applications
IMVP Vcore Switching for Notebook VRM Vcore Switching for Desktop and Server OringFET / Load Switch DC-DC Conversion
Top
Bottom S Pin 1 S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 30 +/-20 28 53 14 80 29 33 2.5 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.7 50 °C/W
Package Marking and Ordering Information
Device Marking FDMS7680 Device FDMS7680 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units
©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C
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FDMS7680 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 13 1 100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V , ID = 14 A VGS = 4.5 V, ID = 11 A VGS = 10 V, ID = 14 A, TJ = 125 °C VDS = 5 V, ID = 14 A 1.25 1.9 -6 5.6 8.0 7.3 85 6.9 11 10.1 S mΩ 3.0 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1390 430 60 0.9 1850 575 85 2.0 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 1 4 A VDD = 15 V, ID = 14 A, VGS = 10 V, RGEN = 6 Ω 10 4 21 3 20 9 4.6 2.3 20 10 34 10 28 13 nC nC ns ns ns ns nC
Drain-Source Diode Characteristics
VSD trr Qrr trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 14 A (Note 2) (Note 2) 0.74 0.83 24 8 20 15 1.2 1.3 39 15 36 27 V ns nC ns nC
IF = 14 A, di/dt = 100 A/µs IF = 14 A, di/dt = 300 A/µs
Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V.
©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C
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FDMS7680 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
80
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 4 V VGS = 3.5 V
8 7 6 5
VGS = 3.5 V VGS = 3 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
60
40
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
4 3 2 1 0 0
VGS = 4.5 V VGS = 10 V VGS = 4 V
20
VGS = 3 V
0 0 1 2 3
VDS, DRAIN TO SOURCE VOLTAGE (V)
20 40 ID, DRAIN CURRENT (A)
60
80
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
25
SOURCE ON-RESISTANCE (mΩ)
ID = 14 A VGS = 10 V
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75
ID = 14 A
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
20 15 10 5
TJ = 25 oC TJ = 125 oC
rDS(on), DRAIN TO
0
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction Temperature
80
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
100
VGS = 0 V
ID, DRAIN CURRENT (A)
60
VDS = 5 V TJ = 150 oC
10
TJ = 150 oC
40
TJ = 25 oC
1
TJ = 25 oC
20
TJ = -55
oC
0.1
TJ = -55 oC
0 1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
0.01 0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C
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FDMS7680 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 14 A VDD = 15 V
3000
Ciss
8
CAPACITANCE (pF) VDD = 10 V VDD = 20 V
1000
Coss
6 4 2
100
f = 1 MHz VGS = 0 V
Crss
0 0 4 8 12 16 20 24
Qg, GATE CHARGE (nC)
30 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
60
ID, DRAIN CURRENT (A)
50
IAS, AVALANCHE CURRENT (A)
50 40 30 20
Limited by Package VGS = 4.5 V
o
TJ = 25 oC
10
TJ = 100 oC
VGS = 10 V
TJ = 125 oC
10
RθJC = 3.7 C/W
1 0.001
0.01
0.1
1
10
100
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
100
P(PK), PEAK TRANSIENT POWER (W) 100 us
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
1000
VGS = 10 V
SINGLE PULSE RθJA = 125 oC/W TC = 25 oC
10
1 ms
100
1
THIS AREA IS LIMITED BY rDS(on)
10 ms 100 ms 1s 10 s DC
10
0.1
SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TC = 25 oC
1 0.5 -4 10 10
-3
0.01 0.01
0.1
1
10
100 200
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C
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FDMS7680 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZθJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RθJA = 125 C/W
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA
-2 -1
0.001 -4 10
10
-3
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve Figure 15.
16 12
di/dt = 300 A/µs
CURRENT (A)
8 4 0 -4 0 20 40 60
TIME (ns)
80
100
120
Figure 14. Body Diode Reverse Recovery Characteristics
©2008 Fairchild Semiconductor Corporation FDMS7680 Rev.C
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FDMS7680 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2009 Fairchild Semiconductor Corporation FDMS7680 Rev.C
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FDMS7680 N-Channel PowerTrench® MOSFET
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Rev. I38
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
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