FDMS8660S

FDMS8660S N-Channel PowerTrench® SyncFETTM June 2008 FDMS8660S N-Channel PowerTrench® SyncFETTM 30V, 40A, 2.4mΩ Features General Description Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant tm The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Application Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S D S G 5 6 7 8 4G 3 2 1 D D S S S D D D D Power 56 (Bottom view) D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 40 147 25 200 937 83 2.5 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.5 50 °C/W Package Marking and Ordering Information Device Marking FDMS8660S Device FDMS8660S Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FDMS8660S Rev C3 FDMS8660S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 10mA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V 30 21 500 ±100 V mV/°C µA nA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 10mA, referenced to 25°C VGS = 10V, ID = 25A VGS = 4.5V, ID = 21A VGS = 10V, ID = 25A ,TJ = 125°C VDS = 10V, ID = 25A 1 1.5 -4 1.9 2.6 2.9 123 2.4 3.5 3.9 S mΩ 2 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 4345 1215 425 1.0 1.75 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(4.5V) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 4.5V VDS = 15V ID = 25A VDD = 15V, ID = 1A VGS = 10V, RGEN = 6Ω 17 12 76 50 81 44 11 16 31 22 122 80 113 62 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) 0.37 35 98 0.70 V ns nC IF = 25A, di/dt = 300A/µs Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 25A, VDD = 30V, VGS = 10V. FDMS8660S Rev C3 2 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 120 100 ID, DRAIN CURRENT (A) VGS = 10V VGS = 6.0V VGS = 4.5V PULSE DURATION = 300µs DUTY CYCLE = 2%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VGS = 3.0V PULSE DURATION = 300µs DUTY CYCLE = 2%MAX 80 60 40 20 0 0.0 VGS = 3.5V VGS = 3.5V VGS = 3.0V VGS = 10V VGS = 6V VGS = 4.5V 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 20 40 60 80 ID, DRAIN CURRENT(A) 100 120 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 25A VGS = 10V 7 6 5 4 3 2 1 2 ID = 25A PULSE DURATION = 300µs DUTY CYCLE = 2%MAX TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 90 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 1.0 TJ = -55oC TJ = 25oC TJ = 125oC PULSE DURATION = 300µs DUTY CYCLE = 2%MAX Figure 4. On-Resistance vs Gate to Source Voltage 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 TJ = 125oC TJ = 25oC 0.1 0.01 TJ = -55oC 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS8660S Rev C3 3 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 25A 10 VDS = 10V 4 Ciss 8 6 4 2 0 CAPACITANCE (pF) VDS = 15V Coss 10 3 VDS = 20V Crss f = 1MHz VGS = 0V 0 10 20 30 40 50 60 Qg, GATE CHARGE(nC) 70 80 90 10 0.1 2 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 70 60 50 VGS = 4.5V VGS = 10V 60 IAS, AVALANCHE CURRENT(A) TJ = 100oC 10 40 30 20 o TJ = 25oC Limited by Package RθJC = 1.5 C/W 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 3000 10 25 50 75 100 125 o 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1000 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ---------------------125 TA = 25oC ID, DRAIN CURRENT (A) 100 1ms 10 1 0.1 0.01 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 100 10ms 100ms 1s 10s DC I = I25 10 1 SINGLE PULSE 0.1 1 10 100 0.1 -3 10 10 -2 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS8660S Rev C3 4 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 1E-3 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 0 1 2 3 1E-4 -3 10 10 -2 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS8660S Rev C3 5 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8660S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 TJ = 125oC 0.01 CURRENT : 0.8A/DIV 1E-3 TJ = 100oC 1E-4 TJ = 25oC 1E-5 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIM E : 12.5 nS/Div Figure 14. FDMS8660S SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverses leakage versus drain-source voltage FDMS8660S Rev C3 6 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM FDMS8660S Rev C3 7 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FDMS8660S Rev C3 8 www.fairchildsemi.com