FDN302

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V RDS(ON) = 0.080 Ω @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications • Power management • Load switch • Battery protection D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation Parameter Ratings –20 ±12 (Note 1a) Units V V A W °C –2.4 –10 0.5 0.46 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range –55 to +150 250 75 Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) °C/W °C/W Package Marking and Ordering Information Device Marking 302 Device FDN302P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDN302P Rev C(W) FDN302P Electrical Characteristics Symbol BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 12 V, VGS = –12 V VGS = 0 V VDS = 0 V VDS = 0 V Min –20 Typ Max Units V Off Characteristics –12 –1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ===∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –2.4 A ID = –2 A VGS = –2.5 V, VGS = –4.5 V, ID = –2.4A, TJ =125°C VGS = –4.5 V, VDS = –5 V, VDS = –5 V ID = –2.4 A –0.6 –1.0 3 44 64 58 –1.5 V mV/°C 55 80 84 mΩ ID(on) gFS –10 10 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –10 V, f = 1.0 MHz V GS = 0 V, 882 211 112 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 13 11 25 15 23 20 40 27 14 ns ns ns ns nC nC nC VDS = –10 V, VGS = –4.5 V ID = –2.4 A, 9 2 3 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 (Note 2) –0.42 –0.7 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0% FDN302P Rev C(W) FDN302P Typical Characteristics 15 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = -4.5V -ID, DRAIN CURRENT (A) 12 -4.0V -3.5V -3.0V -2.5V VGS = -2.0V 2.5 9 2 -2.5V 1.5 -3.0V -3.5V -4.0V 1 -4.5V 6 -2.0V 3 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.5 0 3 6 9 12 15 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.16 RDS(ON), ON-RESISTANCE (OHM) ID = -1.2 A 0.14 0.12 0.1 TA = 125oC 0.08 0.06 TA = 25oC 0.04 0.02 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -2.4A VGS = -4.5V Figure 3. On-Resistance Variation with Temperature. 12 10 -ID, DRAIN CURRENT (A) -55oC 8 6 4 2 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) VDS = - 5V TA = 125oC 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125oC 25oC 0.01 -55oC 0.1 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN302P Rev C(W) FDN302P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -2.4A 4 CAPACITANCE (pF) -15V 3 VDS = -5V -10V 1400 1200 1000 800 600 400 COSS 200 CRSS 0 2 4 6 8 10 12 CISS f = 1MHz VGS = 0 V 2 1 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 10ms 100ms 1 VGS =-4.5V SINGLE PULSE RθJA = 270oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 10s 1ms P(pk), PEAK TRANSIENT POWER (W) 20 Figure 8. Capacitance Characteristics. SINGLE PULSE RθJA = 270°C/W TA = 25°C 15 10 0.1 5 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) + RθJA RθJA = 270 °C/W P(pk) t1 t2 SINGLE PULSE 0.01 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDN302P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1