FDN372S

FDN372S September 2002 FDN372S 30V N-Channel PowerTrench SyncFET™ General Description The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter. Features • 2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • • DC-DC Converter Motor Drives D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ± 16 (Note 1a) Units V V A W °C 2.6 10 0.5 0.46 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Marking and Ordering Information Device Marking 372 Device FDN372S Reel Size 7’’ Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDN372S Rev C(W) FDN372S Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1 mA Min 30 Typ Max Units V Off Characteristics ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VGS = 0 V VDS = 0 V 24 500 ±100 mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA 1 1.4 –3.2 32 36 45 3 V mV/°C ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 2.6 A ID = 2.3 A VGS = 4.5 V, VGS = 10V, ID = 2.6 A, TJ = 125°C VGS = 10 V, VDS = 5 V VDS = 10V, ID = 2.6 A 40 50 60 mΩ ID(on) gFS 10 15 A S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 15 mV V GS = 0 V, 630 115 45 pF pF pF Ω f = 1.0 MHz 2.4 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 7 5 21 2.7 14 10 34 5.4 8.1 1.9 1.7 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 2.6 A, 5.8 1.3 1.2 Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 0.7 A (Note 2) 0.7 440 10 (Note 2) A mV ns nC 700 IF = 2.6 A, diF/dt = 300 A/µs 4 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN372S Rev C(W) FDN372S Typical Characteristics 25 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 20 ID, DRAIN CURRENT (A) 4.5V 3.5V 3.0V 2 VGS = 2.5V 1.8 1.6 1.4 1.2 1 0.8 15 10 3.5V 4.5V 5.0V 4 5V 2.5V 5 10V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 10 20 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 2.6A VGS = 10V 1.4 RDS(ON), ON-RESISTANCE (OHM) 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 ID = 1.3A 1.2 TA = 125oC 1 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 o 0.02 100 125 1 2 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 VDS = 10V ID, DRAIN CURRENT (A) 8 IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 6 125oC 4 0.1 TA = 125oC 25oC -55oC 0.01 2 0.001 0 0.5 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0.0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN372S Rev C(W) FDN372S Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 800 ID = 2.6A 4 VDS = 10V 15V Ciss 600 f = 1 MHz VGS = 0 V 20V 3 CAPACITANCE (pF) 400 2 1 200 Coss Crss 0 0 1 2 3 4 5 6 7 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 20 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 1 DC 1s 100ms 100µs 15 SINGLE PULSE RθJA = 270°C/W TA = 25°C 10 0.1 VGS = 10V SINGLE PULSE RθJA = 270oC/W TA = 25oC 5 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 RθJA(t) = r(t)* RθJA 0.2 RθJA = 270 C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. T hermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN372S Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FASTâ CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerTrenchâ MicroFET™ QFET™ MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHERâ OPTOLOGICâ SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFETâ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1