FDN5632N_F085

FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET September 2008 FDN5632N_F085 ® N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features RDS(on) = 98mΩ at VGS = 4.5V, ID = 1.6A RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant tm Applications DC/DC converter Motor Drives ©2008 Fairchild Semiconductor Corporation FDN5632N_F085 Rev. A (W) 1 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID PD Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed Power Dissipation Parameter Ratings 60 ±20 1.7 10 1.1 -55 to +150 Units V V A W oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 75 111 o C/W oC/W Package Marking and Ordering Information Device Marking 5632 Device FDN5632N_F085 Package SSOT3 Reel Size 7” Tape Width 8mm Quantity 3000 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 48V, VGS = 0V VGS = ±20V TA = 125oC 60 1 250 ±100 V µA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 1.7A, VGS= 10V ID = 1.6A, VGS= 6V rDS(on) Drain to Source On Resistance ID = 1.6A, VGS= 4.5V ID = 1.7A, VGS= 10V, TA = 150oC 1 2.0 57 62 70 107 3 82 88 98 135 mΩ V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller“ Charge VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VDD = 20V ID = 1.7A 475 60 30 1.4 9.2 1.5 1.4 12 pF pF pF Ω nC nC nC FDN5632N_F085 Rev. A (W) 2 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TA = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 1.0A VGS = 10V, RGEN = 6Ω 15 1.7 5.2 1.3 30 12.9 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 1.7A ISD = 0.85A ISD = 1.7A, dISD/dt = 100A/µs 0.8 0.8 16.0 7.9 1.25 1.0 21 10.3 V ns nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDN5632N_F085 Rev. A (W) 3 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 3 CURRENT LIMITED BY PACKAGE ID, DRAIN CURRENT (A) 2 VGS = 10V 1 VGS = 4.5V RθJA = 111 C/W o 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 DUTY CYCLE - DESCENDING ORDER Figure 2. Maximum Continuous Drain Current vs Ambient Temperature 1 NORMALIZED THERMAL IMPEDANCE, ZθJA D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 111 C / W 0.01 10 -3 10 -2 10 -1 10 10 t, RECTANGULAR PULSE DURATION(s) 0 1 10 2 10 3 10 4 Figure 3. Normalized Maximum Transient Thermal Impedance 100 VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TC 125 IDM, PEAK CURRENT (A) 10 SINGLE PULSE o RθJA = 111 C / W 1 -3 10 10 -2 10 -1 1 10 t, RECTANGULAR PULSE DURATION(s) 10 2 10 3 10 4 Figure 4. Peak Current Capability FDN5632N_F085 Rev. A (W) 4 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 30 ID, DRAIN CURRENT (A) 12 ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 10 100us 9 VDD = 5V 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TA = 25 C o 6 TJ = 25oC TJ = -55oC TJ = 150oC 0.1 0.01 1s DC 3 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.001 0.01 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 0.1 1 10 100 300 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 12 VGS = 10V Figure 6. Transfer Characteristics 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) VGS = 6V ID = 1.7A ID, DRAIN CURRENT (A) 9 VGS = 5V VGS = 4.5V VGS = 3.5V 150 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 6 VGS = 4V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 100 TJ = 150oC 3 VGS = 3V 50 TJ = 25oC 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Saturation Characteristics Figure 8. Drain to Source On-Resistance Variation vs Gate to Source Voltage 1.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 1.7A VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE 1.2 1.0 0.8 0.6 0.4 -80 VGS = VDS ID = 250µA -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature FDN5632N_F085 Rev. A (W) 5 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 1000 CAPACITANCE (pF) 1.10 1.05 1.00 0.95 Ciss 100 Coss f = 1MHz VGS = 0V Crss 0.90 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 ID = 1.7A Figure 12. Capacitance vs Drain to Source Voltage VGS, GATE TO SOURCE VOLTAGE(V) 8 6 VDD = 20V VDD = 30V 4 VDD = 40V 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 Figure 13. Gate Charge vs Gate to Source Voltage FDN5632N_F085 Rev. A (W) 6 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com