FDP047N10

FDP047N10 N-Channel PowerTrench® MOSFET August 2010 FDP047N10 Description N-Channel PowerTrench® MOSFET 100V, 164A, 4.7mΩ General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handing capability • RoHS compliant Application • DC to DC converters / Synchronous Rectification D G G DS TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG .TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, Silicon Limited) Continuous (TC = 100oC, Silicon Limited) Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) - Derate above 25oC (TC = 25oC) Ratings 100 ±20 164* 116* 120 656* 1153 4.5 375 2.5 -55 to +175 300 Units V V A A A A mJ V/ns W W/oC o o Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. * Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.4 0.5 62.5 o Units C/W ©2010 Fairchild Semiconductor Corporation FDP047N10 Rev. B2 1 www.fairchildsemi.com FDP047N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP047N10 Device FDP047N10 Package TO-220 Reel Size Tape Width Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 100V, VGS = 0V, TC = 150oC VGS = ±20V, VDS = 0V VDS = 100V, VGS = 0V 100 0.1 1 500 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 75A VDS = 10V, ID = 75A (Note 4) 2.5 - 3.5 3.9 170 4.5 4.7 - V mΩ S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 11500 1120 455 15265 1500 680 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 80V, ID = 75A VGS = 10V (Note 4, 5) VDD = 50V, ID = 75A VGS = 10V, RGEN = 25Ω (Note 4, 5) 174 386 344 244 160 56 36 358 782 698 499 210 - ns ns ns ns nC nC nC - Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/μs (Note 4) - 88 245 164 656 1.25 - A A V ns nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP047N10 Rev. B2 2 www.fairchildsemi.com FDP047N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 300 8V 10V 7V 6.5 V 6.0 V Figure 2. Transfer Characteristics 400 ID,Drain Current[A] ID,Drain Current[A] 100 100 175 C o -55 C 25 C o o 5.5 V 10 VGS = 5V *Notes: 1. 250μs Pulse Test 2. TC = 25 C o 10 6 0.1 1 VDS,Drain-Source Voltage[V] 5 1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 2 4 6 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 300 RDS(ON) [mΩ], Drain-Source On-Resistance IS, Reverse Drain Current [A] 8 100 175 C 25 C o o 6 VGS = 10V 4 VGS = 20V 10 *Notes: 1. VGS = 0V 2 *Note: TJ = 25 C o 0 0 100 200 300 ID, Drain Current [A] 400 2 0.0 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 16000 14000 12000 Capacitances [pF] 10000 8000 6000 4000 2000 0 0.1 Crss Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 *Note: ID = 75A 1 10 VDS, Drain-Source Voltage [V] 30 0 0 30 60 90 120 150 Qg, Total Gate Charge [nC] 180 FDP047N10 Rev. B2 3 www.fairchildsemi.com FDP047N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 75A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 1000 100μs 10μs Figure 10. Maximum Drain Current vs. Case Temperature 200 ID, Drain Current [A] 100 10 Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C o ID, Drain Current [A] 1ms 10ms DC 150 100 Limited by package 1 0.1 2. TJ = 175 C 3. Single Pulse o 50 0.01 0.1 1 10 VDS, Drain-Source Voltage [V] 100 200 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZθJC] 0.5 0.1 0.2 0.1 0.05 PDM t1 t2 o 0.01 0.02 0.01 Single pulse *Notes: 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 1E-3 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDP047N10 Rev. B2 4 www.fairchildsemi.com FDP047N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP047N10 Rev. B2 5 www.fairchildsemi.com FDP047N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDP047N10 Rev. B2 6 www.fairchildsemi.com FDP047N10 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 FDP047N10 Rev. B2 7 www.fairchildsemi.com FDP047N10 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ Power-SPM™ ®* AccuPower™ FRFET® PowerTrench® Auto-SPM™ The Power Franchise® Global Power ResourceSM PowerXS™ Build it Now™ ® Green FPS™ Programmable Active Droop™ CorePLUS™ Green FPS™ e-Series™ QFET® CorePOWER™ CROSSVOLT™ QS™ Gmax™ TinyBoost™ CTL™ GTO™ Quiet Series™ TinyBuck™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyCalc™ ™ DEUXPEED® ISOPLANAR™ TinyLogic® Dual Cool™ MegaBuck™ TINYOPTO™ EcoSPARK® MICROCOUPLER™ Saving our world, 1mW/W/kW at a time™ TinyPower™ EfficentMax™ MicroFET™ SignalWise™ TinyPWM™ ESBC™ MicroPak™ SmartMax™ TinyWire™ MicroPak2™ SMART START™ ® TriFault Detect™ MillerDrive™ SPM® TRUECURRENT™* ® STEALTH™ MotionMax™ Fairchild μSerDes™ ® SuperFET™ Motion-SPM™ Fairchild Semiconductor SuperSOT™-3 OptiHiT™ FACT Quiet Series™ SuperSOT™-6 OPTOLOGIC® FACT® UHC® OPTOPLANAR® SuperSOT™-8 FAST® ® Ultra FRFET™ SupreMOS™ FastvCore™ UniFET™ SyncFET™ FETBench™ VCX™ Sync-Lock™ FlashWriter® * PDP SPM™ VisualMax™ FPS™ XS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FDP047N10 Rev. B2 8 www.fairchildsemi.com