FDP10N60ZU

FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET April 2009 FDP10N60ZU / FDPF10N60ZUT N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) • Low Crss ( Typ. 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFET TM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* o Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDP10N60ZU FDPF10N60ZUT 600 ±30 9* 5.4* 36* 100 9 18 20 Units V V A A mJ A mJ V/ns 9 5.4 36 180 1.45 -55 to +150 300 42 0.3 W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient FDP10N60ZU FDPF10N60ZUT 0.7 0.5 62.5 3.0 62.5 o Units C/W ©2009 Fairchild Semiconductor Corporation FDP10N60ZU/FDPF10N60ZUT Rev. A 1 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP10N60ZU FDPF10N60ZUT Device FDP10N60ZU FDPF10N60ZUT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 600V, VGS = 0V VDS = 480V, TC = 125oC VGS = ±30V, VDS = 0V 600 0.8 25 250 ±10 V V/oC μA μA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 4.5A VDS = 40V, ID = 4.5A 3.0 0.65 12.5 5.0 0.8 V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 480V, ID = 10A VGS = 10V (Note 4) VDS = 25V, VGS = 0V f = 1MHz - 1490 230 15 31 8 12 1980 240 25 40 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 300V, ID = 10A RG = 25Ω , VGS = 10V (Note 4) - 25 40 95 60 60 90 200 130 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 10A VGS = 0V, ISD = 10A dIF/dt = 100A/μs 45 52 9 36 1.6 A A V ns nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FDP10N60ZU/FDPF10N60ZUT Rev. A 2 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 30 Figure 2. Transfer Characteristics 30 20 ID,Drain Current[A] ID,Drain Current[A] 10 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 20 25 C o o 10 150 C *Notes: 1. 250μs Pulse Test 2. TC = 25 C o * Notes : 1. VDS = 20V 2. 250μs Pulse Test 1 1 10 VDS,Drain-Source Voltage[V] 20 1 3 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.2 1.1 1.0 0.9 VGS = 10V Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(on) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 150 C o 10 25 C o 0.8 VGS = 20V 0.7 * Note : TJ = 25 C o Notes: 1. VGS = 0V 2. 250μs Pulse Test 0.6 0 5 10 15 20 ID, Drain Current [A] 25 30 1 0.0 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 5. Capacitance Characteristics 3000 2500 Capacitances [pF] 2000 Ciss Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 150V VDS = 380V VDS = 400V 8 * Note: 1. VGS = 0V 2. f = 1MHz 6 1500 1000 500 0 0.1 4 2 * Note : ID = 10A Crss 0 1 10 VDS, Drain-Source Voltage [V] 30 0 10 20 30 Qg, Total Gate Charge [nC] 40 FDP10N60ZU/FDPF10N60ZUT Rev. A 3 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperaure 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. Maximum Safe Operating Area - FDPF10N60ZUT 100 20μs 100μs 1.1 ID, Drain Current [A] 10 1ms 10ms 1.0 1 Operation in This Area is Limited by R DS(on) DC 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 10 8 ID, Drain Current [A] 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDPF10N60ZUT 5 Thermal Response [ZθJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 Single pulse * Notes : 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -3 o 0.01 -4 10 10 10 10 1 10 Rectangular Pulse Duration [sec] -2 -1 10 2 10 3 FDP10N60ZU/FDPF10N60ZUT Rev. A 4 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP10N60ZU/FDPF10N60ZUT Rev. A 5 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP10N60ZU/FDPF10N60ZUT Rev. A 6 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP10N60ZU/FDPF10N60ZUT Rev. A 7 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT Rev. A 8 FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM™ PowerTrench® F-PFS™ The Power Franchise® Build it Now™ PowerXS™ FRFET® ® CorePLUS™ Global Power ResourceSM Programmable Active Droop™ ® CorePOWER™ QFET Green FPS™ TinyBoost™ CROSSVOLT™ Green FPS™ e-Series™ QS™ TinyBuck™ CTL™ Gmax™ Quiet Series™ TinyLogic® Current Transfer Logic™ GTO™ RapidConfigure™ ® TINYOPTO™ EcoSPARK IntelliMAX™ TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ Saving our world, 1mW /W /kW at a time™ EZSWITCH™ * MegaBuck™ TinyWire™ ™* MICROCOUPLER™ SmartMax™ TriFault Detect™ MicroFET™ SMART START™ TRUECURRENT™* MicroPak™ SPM® ® μSerDes™ MillerDrive™ STEALTH™ Fairchild® MotionMax™ SuperFET™ Fairchild Semiconductor® Motion-SPM™ SuperSOT™-3 FACT Quiet Series™ UHC® OPTOLOGIC® SuperSOT™-6 ® FACT® OPTOPLANAR Ultra FRFET™ SuperSOT™-8 ® FAST® UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ FlashWriter® * XS™ ®* Power-SPM™ FPS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDP10N60ZU/FDPF10N60ZUT Rev. A 9 www.fairchildsemi.com