FDP12N35

FDP12N35 / FDPF12N35 350V N-Channel MOSFET UniFET FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features • • • • • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V Low gate charge ( typical 18 nC) Low Crss ( typical 15 pF) Fast switching Improved dv/dt capability April 2007 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP12N35 12 7.2 48 FDPF12N35 350 12* 7.2* 48* Unit V A A A V mJ A mJ V/ns ± 30 335 12 13.5 4.5 135 1.09 -55 to +150 300 31.3 0.25 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP12N35 0.92 0.5 62.5 FDPF12N35 4.0 -62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP12N35 / FDPF12N35 Rev. B FDP12N35 / FDPF12N35 350V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP12N35 FDPF12N35 Device FDP12N35 FDPF12N35 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 350V, VGS = 0V VDS = 280V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VDS = 40V, ID = 6A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 350 -----3.0 ------ Typ -0.35 -----0.32 13 855 135 15 30 180 35 60 18 5 8 ---270 2.3 Max Units --1 10 100 -100 5.0 0.38 -1110 175 25 70 370 80 130 25 --12 48 1.4 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 175V, ID = 12A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 280V, ID = 12A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 12A VGS = 0V, IS = 12A dIF/dt =100A/μs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP12N35 / FDPF12N35 Rev. B 2 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 1 ID, Drain Current [A] ID, Drain Current [A] 10 1 150 C o o 10 0 25 C -55 C * Notes : 1. VDS = 40V 2. 250μs Pulse Test o * Notes : 1. 250μs Pulse Test 2. TC = 25 C o 10 -1 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 2 1.2 RDS(ON) [Ω], Drain-Source On-Resistance 1.0 0.8 VGS = 10V IDR, Reverse Drain Current [A] 10 1 0.6 0.4 VGS = 20V 150 C 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test o o 0.2 0 5 10 15 20 25 * Note : TJ = 25 C o 30 35 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 1800 Ciss = Cgs + Cgd (Cds = shorted) Figure 6. Gate Charge Characteristics 12 1600 1400 Crss = Cgd VGS, Gate-Source Voltage [V] Coss = Cds + Cgd 10 VDS = 70V VDS = 175V VDS = 280V Coss Ciss 8 Capacitances [pF] 1200 1000 800 600 400 200 0 -1 10 6 4 Crss * Note : 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 12A 0 10 0 10 1 0 2 4 6 8 10 12 14 16 18 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDP12N35 / FDPF12N35 Rev. B 3 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 6 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP12N35 Figure 9-2. Maximum Safe Operating Area for FDPF12N35 10 2 10 2 10 μs 100 μs 10 μs ID, Drain Current [A] 10 1 ms 10 ms 100 ms ID, Drain Current [A] 1 10 1 100 μs 1 ms 10 ms 100 ms DC 10 0 Operation in This Area is Limited by R DS(on) DC 10 0 Operation in This Area is Limited by R DS(on) 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 10 1 10 2 10 -2 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 15 ID, Drain Current [A] 10 5 0 25 50 75 100 o 125 150 TC, Case Temperature [ C] FDP12N35 / FDPF12N35 Rev. B 4 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP12N35 10 0 ZθJC(t), Thermal Response D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 * Notes : 1. Z θ JC (t) = 0.92 C /W Max. 2. D uty Factor, D =t 1 /t 2 o t2 10 -2 single pulse 3 . T JM - T C = P DM * Z θ JC (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF12N35 D=0.5 ZθJC(t), Thermal Response 10 0 0.2 0.1 0.05 PDM t1 t2 10 -1 0.02 0.01 * Notes : 0 1. Z θJC(t) = 4.0 C/W Max. 2. Duty Factor, D=t1/t2 single pulse 10 -2 -5 -4 -3 -2 3. T JM - T C = P DM * Zθ JC(t) 10 10 10 10 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] FDP12N35 / FDPF12N35 Rev. B 5 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP12N35 / FDPF12N35 Rev. B 6 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP12N35 / FDPF12N35 Rev. B 7 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP12N35 / FDPF12N35 Rev. B 8 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FDP12N35 / FDPF12N35 Rev. B 9 15.87 ±0.20 www.fairchildsemi.com FDP12N35 / FDPF12N35 350V N-Channel MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ PDP-SPM™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® TM tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I26 No Identification Needed Full Production Obsolete Not In Production 10 10 FDP12N35 / FDPF12N35 Rev. B www.fairchildsemi.com