FDP39N20

FDP39N20 / FDPF39N20 200V N-Channel MOSFET March 2007 FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features • 39A, 200V, RDS(on) = 0.066Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 57 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP39N20 200 39 23.4 156 ±30 860 39 FDPF39N20 39 * 23.4 * 156 * Unit V A A A V mJ A mJ V/ns 25.1 4.5 251 2.0 -55 to +150 300 59 0.48 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP39N20 0.5 0.5 62.5 FDPF39N20 2.1 62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP39N20 / FDPF39N20 Rev. A FDP39N20 / FDPF39N20 200V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP39N20 FDPF39N20 Device FDP39N20 FDPF39N20 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 200V, VGS = 0V VDS = 160V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 19.5A VDS = 40V, ID = 19.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 200 -----3.0 ------ Typ. -0.2 -----0.056 28.5 1640 400 57 30 160 150 150 38 11 16.5 Max Units --1 10 100 -100 5.0 0.066 -2130 520 85 70 330 310 310 49 --V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 100V, ID = 39A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 160V, ID = 39A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 39A VGS = 0V, IS = 39A dIF/dt =100A/µs (Note 4) ------ ---152 1.1 39 156 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.85mH, IAS = 39A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 39A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP39N20 / FDPF39N20 Rev. A 2 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 2 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 1 150 C 25 C -55 C ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test o o o 10 0 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.14 10 2 RDS(ON) [Ω ], Drain-Source On-Resistance 0.10 0.08 VGS = 10V IDR, Reverse Drain Current [A] 0.12 10 1 150℃ 25℃ 0.06 VGS = 20V ※ Note : TJ = 25 0.04 0 25 50 75 ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 100 125 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 12 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 10 VDS = 40V VDS = 100V VDS = 160V Coss Capacitances [pF] 8 Ciss 2000 6 4 Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 2 ※ Note : ID = 39A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDP39N20 / FDPF39N20 Rev. A 3 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 19.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area - FDP39N20 Figure 9-2. Maximum Safe Operating Area - FDPF39N20 10 2 10 µs 100 µs 1 ms 10 ms 100 ms DC 10 2 10 µs 100 µs 1 ms 10 ms Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 10 1 10 1 Operation in This Area is Limited by R DS(on) 100 ms DC 10 0 10 0 ※ Notes : ※ Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -2 10 0 -2 10 10 1 10 2 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 40 30 ID, Drain Current [A] 20 10 0 25 50 75 100 125 150 TC, Case Temperature [℃] FDP39N20 / FDPF39N20 Rev. A 4 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP39N20 Zθ JC Thermal Response (t), D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 ※ N o te s : 1 . Z θ J C t) = 0 .5 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( PDM t1 s in g le p u ls e 10 -2 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] Figure 11-2. Transient Thermal Response Curve - FDPF39N20 10 0 D = 0 .5 0 .2 0 .1 ※ N o te s : 1 . Z θ J C t) = 2 .1 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( Zθ JC Thermal Response (t), 10 -1 0 .0 5 0 .0 2 0 .0 1 PDM t1 t2 10 -2 s in g le p u ls e -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] FDP39N20 / FDPF39N20 Rev. A 5 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP39N20 / FDPF39N20 Rev. A 6 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP39N20 / FDPF39N20 Rev. A 7 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP39N20 / FDPF39N20 Rev. A 8 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 FDP39N20 / FDPF39N20 Rev. A 9 15.87 ±0.20 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 FDP39N20 / FDPF39N20 Rev. A www.fairchildsemi.com