F DP4020P
February 1999 PRELIMINARY
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel.
Features
• -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V. • Critical DC electrical parameters specified at elevated temperature. • High density cell design for extremely low RDS(on). • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. • 175°C maximum junction temperature rating.
S
G
D
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
FDP4020P
-20 ±8 -16 -48 37.5
FDB4020P
Units
V V A W W/°C °C °C/W °C/W
Total Power Dissipation @ TC = 25°C Derate above 25 °C Operating and Storage Junction Temperature Range
0.25 -65 to +175
Thermal Characteristics
Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient
(Note 1)
4 62.5 40
Package Outlines and Ordering Information
Device Marking
FDP4020P
Device
FDP4020P
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDP4020P Rev. A
F DP4020P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
-20
Typ
Max
Units
V
Off Characteristics
Drain-Source Breakdown VGS = 0 V, ID = -250 µA Voltage Breakdown Voltage ID = -250 µA, Referenced to 25°C Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
-28 -1 100 -100
mV/°C µA nA nA
VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V,ID = -8 A, VGS = -4.5 V,ID = -8 A,TJ=125°C VGS = -2.5 V,ID = -7 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -8 A
-0.4
-0.58 2 0.068 0.098 0.096
-1
V mV/°C
0.08 0.13 0.110
Ω
ID(on) gFS
-20 14
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
665 270 70
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω
8 24 50 29
16 38 80 45 13
ns ns ns ns nC nC nC
VDS = -5 V, ID = -16 A, VGS = -4.5 V
9.5 1.3 2.2
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -16 A
(Note 2) (Note 2) (Note 2)
-16 -48 -1.2
A V
Notes: 1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDP4020P Rev. A
F DP4020P
Typical Characteristics
40 -4.0V -3.5V 24 -3.0V
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-ID, DRAIN CURRENT (A)
32
1.8 VGS = -2.0V 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V
16
-2.5V
8
-2.0V
0 0 2 4 6 8 10
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.2 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = -16A VGS = -4.5V
ID = -8A 0.16
0.12
TA = 125 C 0.08 TA = 25 C 0.04
o
o
0 125 150 175 1.5 2 2.5 3 3.5 4 4.5 5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
20 VDS = -5V -ID, DRAIN CURRENT (A) 16 TA = -55 C 25 C 125 C
o o o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V
1
12
TA = 125 C 25 C -55 C
o o
o
8
0.01
4
0 0 0.5 1 1.5 2 2.5 3 3.5 4
0.0001 0 0.4 0.8 1.2 1.6
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP4020P Rev. A
F DP4020P
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -16A 4
(continued)
VDS = -5V -10V
1400 1200 CAPACITANCE (pF) 1000 800 600 400 200 COSS CRSS 0 4 8 12 16 20 CISS f = 1 MHz VGS = 0 V
-15V 3
2
1
0 0 3 6 Qg, GATE CHARGE (nC) 9 12
0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100µs 1ms POWER (W) 10ms DC 100ms
Figure 8. Capacitance Characteristics.
1000 SINGLE PULSE 800 RθJC = 4 C/W TA = 25 C 600
o o
10
1
400
VGS = -4.5V SINGLE PULSE RθJC = 4 C/W TA = 25 C
o o
200
0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
R θJC (t) = r(t) * R θJC R θJC = 4°C/W
0.1
0.2
0.2 0.05 Single Pulse
P(pk)
t1
t2
0.1
TJ - TA = P * R θJC (t) Duty Cycle, D = t 1 / t 2
0.001 0.01 t1 , TIME (sec) 0.1 1 10
0.05 0.0001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design.
FDP4020P Rev. A
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is made of PVC plastic treated with anti -stati c agent.These tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated pa per. One box contains two ba gs maximum (see fig. 1.0). And one or several o f these boxes are placed inside a labeled shipp ing bo x whic h c omes in different sizes dependi ng on the nu mber of parts ship ped. The other option comes in bulk as described in the Packagin g Information table. The unit s in this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped.
45 unit s per Tube
12 Tubes per Bag
2 bag s per Box Conduct ive Plasti c B ag
530mm x 130mm x 83mm Intermediate box
TO-220 Packaging Information: Figure 2.0
TO-220 Packaging Information Packaging Option Packaging type Qty per Tube/Box Box Dimension (mm) Max qty per Box Weight per unit (gm) Note/Comments Standard
(no f l ow code )
FSCINT Labe l samp le
FAIRCHILD SEMICONDUCTOR CORPORATION
1080 uni ts maxi mum quant it y per bo x
S62Z BULK 300
LOT:
CBVK741B019
QTY:
HTB:B 1080
NSID:
FDP7060
SPEC:
Rail/Tube 45 530x130x83 1,080 1.4378
D/C1:
D9842
SPEC REV: QA REV:
B2
114x102x51 1,500 1.4378
FSCINT Label
(FSCINT)
TO-220 bulk Packing Configuration: Figure 3.0
FSCINT Label An ti-stati c Bubbl e Sheet s 530mm x 130mm x 83mm Intermediate box
1500 uni ts maxi mum quant it y per intermediate box 300 units per EO70 box 114mm x 102mm x 51mm EO70 Immed iate Box 5 EO70 boxe s per per Interm ediate Bo x
FSCINT Label
TO-220 Tube Configuration: Figure 4.0
Note: All dim ensions are in inches
0.123 +0.001 -0.003
0.165 0.080 0.450 ±.030 1.300 ±.015 0.032 ±.003 0.275
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
F 9852 NDP4060L
0.160
20.000 +0.031 -0.065
0.800 0.275
August 1999, Rev. B
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.