FDP5N50_07

FDP5N50 / FDPF5N50 N-Channel MOSFET December 2007 FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 85 0.67 -55 to +150 300 5 3 20 225 5 8.5 4.5 28 0.22 FDP5N50 500 ±30 5* 3* 20* FDPF5N50 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP5N50 1.4 0.5 62.5 FDPF5N50 4.5 62.5 o Units C/W ©2007 Fairchild Semiconductor Corporation FDP5N50 / FDPF5N50 Rev. A 1 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP5N50 FDPF5N50 Device FDP5N50 FDPF5N50 Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V 500 0.6 1 10 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 2.5A VDS = 20V, ID = 2.5A (Note 4) 3.0 - 1.15 4.3 5.0 1.4 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 480 66 5 11 3 5 640 88 8 15 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A R G = 25 Ω (Note 4, 5) - 13 22 28 20 36 54 66 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 5A VGS = 0V, ISD = 5A dIF/dt = 100A/μs (Note 4) - 300 1.8 5 20 1.4 - A A V ns μC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 18mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50 / FDPF5N50 Rev. A 2 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] ID,Drain Current[A] VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 150 C 25 C o o 1 1 -55 C o 0.1 0.04 0.1 *Notes: 1. 250μs Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 10 VDS,Drain-Source Voltage[V] 30 0.1 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 70 RDS(ON) [Ω], Drain-Source On-Resistance 2.5 IS, Reverse Drain Current [A] 150 C o 2.0 VGS = 10V 10 25 C o 1.5 VGS = 20V 1.0 0 3 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 6 ID, Drain Current [A] 9 12 1 0.4 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 250V VDS = 400V 750 Capacitances [pF] 8 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 500 Coss 4 250 Crss 2 *Note: ID = 5A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 4 8 Qg, Total Gate Charge [nC] 12 FDP5N50 / FDPF5N50 Rev. A 3 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 1.0 *Notes: 1. VGS = 10V 2. ID = 2.5A 0.5 -75 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 9. Maximum Safe Operating Area - FDP5N50 30 30μs 100μs 1ms 10ms Figure 10. Maximum Safe Operating Area - FDPF5N50 30 30μs 10 ID, Drain Current [A] 10 ID, Drain Current [A] 1ms 10ms 100μs 1 Operation in This Area is Limited by R DS(on) DC 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 1 10 100 VDS, Drain-Source Voltage [V] 800 0.01 1 10 100 VDS, Drain-Source Voltage [V] 800 Figure 11. Maximum Drain Current vs. Case Temperature 6 5 ID, Drain Current [A] 4 3 2 1 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 FDP5N50 / FDPF5N50 Rev. A 4 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDP5N50 3 Thermal Response [ZθJC] 1 0.5 0.2 0.1 PDM PDM 0.1 0.05 *Notes: 0.02 0.01 Single pulse t1 t1 t2 t2 o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 -5 10 10 -4 10 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 Figure 13. Transient Thermal Response Curve - FDPF5N50 10 Thermal Response [ZθJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 *Notes: 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 o Single pulse 0.01 -5 10 10 10 -3 10 10 10 10 Rectangular Pulse Duration [sec] -2 -1 0 1 10 2 10 3 FDP5N50 / FDPF5N50 Rev. A 5 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50 / FDPF5N50 Rev. A 6 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP5N50 / FDPF5N50 Rev. A 7 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Mechanical Dimensions TO-220 FDP5N50 / FDPF5N50 Rev. A 8 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP5N50 / FDPF5N50 Rev. A 9 FDP5N50 / FDPF5N50 N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50 / FDPF5N50 Rev. A 10 www.fairchildsemi.com