FDP6035AL/FDB6035AL
July 2003
FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
• 48 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ± 20 48
(Note 1)
Units
V V A W W/°C °C
180 52 0.3 –65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.9 62.5 °C/W
Package Marking and Ordering Information
Device Marking FDB6035AL FDP6035AL Device FDB6035AL FDP6035AL Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45
©2003 Fairchild Semiconductor Corporation
FDP6035AL/FDB6035AL Rev D(W)
FDP6035AL/FDB6035AL
Electrical Characteristics
Symbol
EAS IAS
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
Test Conditions
VDD = 15 V, ID = 48 A
Min Typ
Max
58 48
Units
mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VGS = 0 V VDS = 0 V 30 23 1 ± 100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 24 A VGS = 4.5 V, ID = 20 A VGS= 10 V, ID = 24 A, TJ=125°C VGS = 10 V, VDS = 10 V VDS = 10V, ID = 24 A
1
1.9 –5 7.9 10.2 13.0
3
V mV/°C
12 14 21
mΩ A
ID(on) gFS
60 68
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
1250 330 155
pF pF pF Ω
VGS = 15 mV,
f = 1.0 MHz
1.3
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 15V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
11 12 29 12
20 22 46 21 18
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 48 A,
13 4.3 5.5
Drain–Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr
Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 24 A
(Note 1)
60 0.92 26 15 1.3
A V nS nC
IF = 24 A, diF/dt = 100 A/µs
FDP6035AL/FDB6035AL Rev D(W)
FDP6035AL/FDB6035AL
Typical Characteristics
180 VGS = 10V 150 ID, DRAIN CURRENT (A) 5.0V 120 4.5V 90 4.0V 60 3.5V 30 3.0V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V
1.8 VGS = 3.5V 3.5V 1.6
1.4 4.0V 4.5V 1.2 5.0V 6.0V 1 10V
0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.030 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 24A VGS =10V
ID = 24A 0.025
1.6
1.4
0.020 TA = 125oC 0.015 TA = 25 C 0.010
o
1.2 1
0.8
0.6 -50 -25 0 25 50 75 100 125 o TJ, JUNCTION TEMPERATURE ( C) 150 175
0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
90 VDS = 5V 75 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
1000 VGS = 0V 100
60
10
TA = 125 C 25oC -55oC
o
45 TA = 125oC 30 25oC 15 -55oC
1
0.1
0.01
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5
0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6035AL/FDB6035AL Rev D(W)
FDP6035AL/FDB6035AL
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
2000 ID = 48A VDS = 10V 20V 1600 CAPACITANCE (pF) 15V f = 1MHz VGS = 0 V
8
Ciss
1200
6
4
800
Coss
400
2
Crss
0 0 5 10 15 Qg, GATE CHARGE (nC) 20 25
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W) 5000
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
RDS(ON) LIMIT
10µs 100µs 1mS 10mS 100mS
4000
SINGLE PULSE RθJC = 2.9°C/W TA = 25°C
100
3000
10
DC VGS = 10V SINGLE PULSE RθJC = 2.9oC/W TA = 25oC
2000
1000
1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.00001
0.0001
0.001 0.01 t1, TIME (sec)
0.1
1
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RθJC(t) = r(t) * RθJC RθJC = 2.9 °C/W P(pk t1 t2 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2
0.2 0.1 0.05 0.02 0.01
0.1
SINGLE PULSE
0.01 0.00001
0.0001
0.001 t1, TIME (sec)
0.01
0.1
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDP6035AL/FDB6035AL Rev D(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™
DISCLAIMER
LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™
Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3
SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™
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Preliminary
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I5