FDP603AL

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage T C = 25°C unless otherwise noted FDP603AL 30 ±20 33 (Note 1) FDB603AL Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C 100 50 0.33 -65 to 175 275 W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 62.5 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDP603AL Rev.D Electrical Characteristics Symbol Parameter T C = 25°C unless otherwise noted) Conditions Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 12 A 100 12 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 oC VGS = 10 V, ID = 25 A TJ =125 °C VGS = 4.5 V, ID = 10 A ID(on) ID(on) gFS On-State Drain Current On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V VDS = 10 V, ID = 25 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 60 15 24 1 1.8 -4.5 0.018 0.026 0.03 0.022 0.035 0.036 A A S o 30 32 10 100 -100 V mV/oC µA nA nA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 1) ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance 3 V mV/oC ∆VGS(th)/∆TJ RDS(ON) Ω DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 1) 670 345 95 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 25 A VGS = 10 V, RGEN = 24 Ω 8 102 20 80 16 140 36 115 26 nS nS nS nS nC nC nC VDS = 10 V ID = 25 A, VGS = 10 V 19 3.5 5.5 DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 1) 25 1 0.85 1.3 1.1 A V TJ = 125°C Note 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. FDP603AL Rev.D Typical Electrical Characteristics 80 I D , DRAIN-SOURCE CURRENT (A) 3 DRAIN-SOURCE ON-RESISTANCE V 60 GS =10V 8.0 7.0 6.0 R DS(ON) , NORMALIZED V 2.5 GS = 4.0V 4.5 5.0 6.0 7.0 8.0 10 5.0 40 2 4.5 20 1.5 4.0 3.0 1 0 0 1 2 3 4 5 0.5 0 20 40 I D , DRAIN CURRENT (A) 60 80 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 R DS(ON) , ON-RESISTANCE (OHM) 1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 R DS(ON) , NORMALIZED ID = 25A V GS = 10V ID= 12.5A 0.05 0.04 TJ = 125°C 0.03 25°C 0.02 -25 0 25 50 75 100 125 150 175 0.01 TJ , JUNCTION TEMPERATURE (°C) 3 4 5 6 7 8 9 10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 20 V DS = 10V ID , DRAIN CURRENT (A) 25 20 15 10 I S , REVERSE DRAIN CURRENT (A) VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 T = 125°C J 5 25°C -55°C 0.001 0 1 2 3 4 5 0.0001 VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDP603AL Rev.D Typical Electrical Characteristics (continued) 10 V GS , GATE-SOURCE VOLTAGE (V) 2000 I D = 25A 8 VDS = 5.0V 10V 20V CAPACITANCE (pF) 1000 Ciss 500 6 Coss 200 4 2 100 0 0 5 10 Q g , GATE CHARGE (nC) 15 20 f = 1 MHz VGS = 0V 0.3 1 4 10 Crss 60 0.1 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 200 100 I D , DRAIN CURRENT (A) 50 20 10 5 2 1 0.5 0.5 R N) (O DS 2000 it Lim 10 0µ s 10 µs POWER (W) 1600 1m s SINGLE PULSE R θJC =3.0° C/W TC = 25°C VGS = 10V SINGLE PULSE RθJC = 3 o C/W TA = 25 °C 1 3 5 10m 100 s m DC s 1200 800 400 10 20 30 50 0 0.01 0.1 1 10 100 1000 V DS , DRAIN-SOURCE VOLTAGE (V)) SINGLE PULSE TIME (ms) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC ( t) = r(t) * RθJC R θJC = 3.0 °C/W 0.1 0.05 P(pk) 0.05 0.03 0.02 0.01 0.01 0.02 0.01 S ingle Pulse t1 t2 TJ - T C = P * R θ JC (t) D uty Cycle, D = t 1 /t2 0.1 0.5 1 5 t1 , TIME (ms) 10 50 100 500 1000 0.05 Figure 11. Transient Thermal Response Curve. FDP603AL Rev.D