FDP6644S

FDP6644S/FDB6644S JANUARY 2002 FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6644S/FDB6644S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6644/FDB6644 in parallel with a Schottky diode. Features • 28 A, 30 V. RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (27nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1) (Note 1) Units V V A W W/°C °C °C 55 150 60 0.48 –65 to +125 275 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6644S FDP6644S Device FDB6644S FDP6644S Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 2002 Fairchild Semiconductor Corporation FDP6644S/FDB6644S Rev C1(W) FDP6644S/FDB6644S Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 1mA Min 30 Typ Max Units V Off Characteristics ID = 10mA, Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = 0 V VDS = 0 V 23 500 100 –100 1 1.3 –9.5 7 8 11.5 60 89 2851 540 196 12 11 53 17 VDS = 15 V, VGS = 5 V ID = 28 A, 27 7 8 VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 28 A, diF/dt = 300 A/µs 0.48 0.6 21 34 0.7 21 20 85 30 38 10 12 17 3 mV/°C uA nA nA V mV/°C mΩ VGS = –16 V VDS = 0 V VDS = VGS, ID = 1mA ID = 10mA, Referenced to 25°C VGS = 10 V, ID = 28 A VGS = 4.5 V, ID = 25 A VGS=10 V, ID =28 A, TJ=125°C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 28 A On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Notes: A S pF pF pF ns ns ns ns nC nC nC V nS nC Dynamic Characteristics VDS = 15 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω Drain–Source Diode Characteristics Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge (Note 1) (Note 1) (Note 2) 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP6644S/FDB6644S Rev C1 (W) FDP6644S/FDB6644S Typical Characteristics 120 VGS = 10V 6.0V ID, DRAIN CURRENT (A) 90 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 3.0V 1.6 VGS = 3.0V 1.4 3.5V 1.2 4.5V 6.0V 1 10V 60 2.5V 30 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 30 60 ID, DRAIN CURRENT (A) 90 120 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 28A VGS =10V ID = 14A 0.02 1.4 1.2 0.015 1 TA = 125oC 0.8 0.01 TA = 25oC 0.005 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 0.6 -50 -25 0 25 50 75 o 100 125 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 90 VDS = 5V 75 ID, DRAIN CURRENT (A) 125oC 60 45 30 15 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 10 IS, REVERSE DRAIN CURRENT (A) 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. TA = 55oC VGS = 0V 1 TA = 125oC 25oC 0.1 -55oC 0.01 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6644S/FDB6644S Rev C1 (W) FDP6644S/FDB6644S Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 28A 8 CAPACITANCE (pF) 20V 6 VDS = 10V 15V 3200 CISS 2400 4000 f = 1MHz VGS = 0 V 4 1600 COSS 800 CRSS 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 1000 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100µs RDS(ON) LIMIT 10ms 100ms 1s 10s 800 SINGLE PULSE RθJC = 2.1°C/W TA = 2 5°C 100 600 10 DC VGS = 1 0V SINGLE PULSE RθJC = 2.1oC/W TA = 25oC 400 200 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJC(t) = r(t) * RθJC RθJC = 2.1 °C/W 0.1 0.1 0.05 0.02 0.01 P(pk t1 t2 SINGLE PULSE 0.01 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP6644S/FDB6644S Rev C1 (W) FDP6644S/FDB6644S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6644S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TA = 100oC 0.001 Current: 0.8A/div 0.0001 TA = 25oC Time: 12.5ns/div 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) Figure 12. FDP6644S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6644). Current: 0.8A/div Time: 12.5ns/div Figure 13. Non-SyncFET (FDP6644) body diode reverse recovery characteristic. FDP6644S/FDB6644S Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4