FDP6670AS

FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. tm Features • 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (28nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 62 (Note 1) Units V V A W W/°C °C °C 150 62.5 0.5 –55 to +150 275 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6670AS FDP6670AS Device FDB6670AS FDP6670AS Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 ©2008 Fairchild Semiconductor Corporation FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1mA Min 30 Typ Max Units V Off Characteristics ID = 10mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 1mA 1 1.7 –4 6.8 8.4 9 60 84 1570 440 160 1.9 9 VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 27 19 16 VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 16 25 13 28 VDS = 15 V, ID = 31 A, 15 5 5 VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) (Note 1) (Note 2) 27 500 ±100 3 mV/°C µA nA V mV/°C 8.5 10.5 12.5 mΩ On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) ID = 10mA, Referenced to 25°C VGS = 10 V, ID = 31 A VGS = 4.5 V, ID = 26.5 A VGS=10 V, ID =31 A, TJ=125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 3 1 A ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf td(on) tr td(off) tf Qg Qgs Qgd Qgd VSD trr Qrr Notes: A S pF pF pF Ω 18 22 43 34 29 29 40 23 39 21 ns ns ns ns ns ns ns ns nC nC nC nC 0.7 0.9 V nS nC Dynamic Characteristics VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge, Vgs=10V Gate–Source Charge, Vgs=5V Gate–Drain Charge Gate–Drain Charge Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Drain–Source Diode Characteristics 0.5 0.6 20 14 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics 150 VGS = 10V 6.0V 5.0V 4.0V 4.5V 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V ID, DRAIN CURRENT (A) 120 1.6 90 3.5V 1.4 4.0V 4.5V 60 5.0V 1.2 6.0V 10V 30 3.0V 1 0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) 4 0.8 0 30 60 90 ID, DRAIN CURRENT (A) 120 150 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 ID = 31A VGS = 10V ID = 15.5A 0.017 1.2 0.012 TA = 125oC 1 0.8 0.007 T A = 25 C o 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0.002 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 80 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 60 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VGS = 0V 1 TA = 125 C 0.1 25oC -55oC o 40 TA = 125 C 20 25oC 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 -55oC o 0 0.01 0 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 31A 2400 f = 1MHz VGS = 0 V CAPACITANCE (pF) VDS = 10V 1800 Ciss 1200 8 20V 15V 6 4 2 600 Crss Coss 0 0 6 12 18 Qg, GATE CHARGE (nC) 24 30 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 1000 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 1s 10s 100µs 10ms 100m 800 SINGLE PULSE RθJC = 2.1°C/W TA = 25°C 600 10 VGS = 10V SINGLE PULSE o RθJC = 2.1 C/W TA = 25 C o DC 400 200 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJC(t) = r(t) * RθJC RθJC = 2.1 °C/W P(pk t1 t2 SINGLE PULSE 0.01 TJ - Tc = P * RθJC(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6670AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TA = 125oC CURRENT: 0.8A/div 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 T IME: 12.5ns/div Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDP6670AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6670A). CURRENT: 0.8A/div TIME: 12.5ns/div Figure 13. Non-SyncFET (FDP6670A) body diode reverse recovery characteristic. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 31A 2400 f = 1MHz VGS = 0 V CAPACITANCE (pF) VDS = 10V 1800 Ciss 1200 8 20V 15V 6 4 2 600 Crss Coss 0 0 6 12 18 Qg, GATE CHARGE (nC) 24 30 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 1000 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 1s 10s 100µs 10ms 100m 800 SINGLE PULSE RθJC = 2.1°C/W TA = 25°C 600 10 VGS = 10V SINGLE PULSE o RθJC = 2.1 C/W TA = 25 C o DC 400 200 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJC(t) = r(t) * RθJC RθJC = 2.1 °C/W P(pk t1 t2 SINGLE PULSE 0.01 TJ - Tc = P * RθJC(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP6670AS/FDB6670AS Rev A2 (X) FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDP6670AS/FDB6670AS Rev A2 (X) Preliminary First Production No Identification Needed Obsolete Full Production Not In Production