FDP6690

FDP6690S/FDB6690S SEPTEMBER 2001 FDP6690S/FDB6690S 30V N-Channel PowerTrench® SyncFET ™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode. Features • 21 A, 30 V. RDS(ON) = 15.5 mΩ @ VGS = 10 V RDS(ON) = 23.0 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (11nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1) (Note 1) Units V V A W W/°C °C °C 42 140 48 0.5 –55 to +150 275 Total Power Dissipation @ TC = 25° C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.6 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6690S FDP6690S Device FDB6690S FDP6690S Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 © 2001 Fairchild Semiconductor Corporation FDP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S Electrical Characteristics Symbol W DSS IAR T A = 25°C unless otherwise noted Parameter (Note 2) Test Conditions Single Pulse, VDD = 25 V, ID=11A Min Typ Max Units 140 11 mJ A Drain-Source Avalanche Ratings Drain-Source Avalanche Energy Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 1mA 30 25 500 100 –100 V mV/°C µA nA nA ID = 10mA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V VGS = –20 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 1mA 1 2.2 –4 12.0 18.5 18.0 3 V mV/°C ID = 10mA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 17 A VGS=10 V, ID = 21 A, TJ=125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 23 A 60 15.5 23.0 22.5 mΩ ID(on) gFS A 33 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1238 342 104 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 11 9 23 13 20 18 37 23 15 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 21A, 11 5 4 Drain–Source Diode Characteristics VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) (Note 1) 0.51 0.69 21 25 0.7 V nS nC (Note 2) Notes: 1 . Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 . See “SyncFET Schottky body diode characteristics” below. F DP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S Typical Characteristics 80 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 5.0V VGS = 4.0V 2 1.8 1.6 1.4 1.2 1 0.8 I D, DRAIN CURRENT (A) 60 4.5V 40 4.5V 5.0V 6.0V 7.0V 8.0V 10V 4.0V 20 3.5V 0 0 1 2 3 4 VD S, DRAIN-SOURCE VOLTAGE (V) 5 0 20 40 I D, DRAIN CURRENT (A) 60 80 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.055 RDS(ON), ON-RESISTANCE (OHM) 1.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 21A VGS =10V ID = 21 A 0.045 1.4 1.2 0.035 T A = 125 C 0.025 T A = 25 C 0.015 o o 1 0.8 0 .6 -50 0.005 -25 0 25 50 75 o TJ , JUNCTION TEMPERATURE ( C) 100 125 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 40 VD S = 5V ID, DRAIN CURRENT (A) 30 I S, REVERSE DRAIN CURRENT (A) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. TA = -55 C o VGS = 0V 25 C 125 C o o 1 20 T A = 125 C 25 C 0.1 o o o 10 -55 C 0 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.01 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. F DP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) I D = 21A VD S = 10V 15V 1600 C ISS CAPACITANCE (pF) 1200 f = 1MHz VGS = 0 V 8 20V 6 800 C OSS 400 4 2 CRSS 0 0 5 10 15 20 25 Qg , GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 2000 Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) I D, DRAIN CURRENT (A) 1600 SINGLE PULSE R θJC = 2.6°C/W TA = 25°C 10µs RDS(ON) LIMIT 100µs 1ms 10ms 100ms DC 100 1200 800 10 VGS = 10V SINGLE PULSE o R θJC = 2 .6 C/W o TA = 25 C 400 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θ JC(t) = r(t) * Rθ J C R θJ C = 2.6 °C/W 0.2 0.1 0.05 0.02 0.01 SINGLE P ULSE 0.1 P(pk t1 t2 T J - T c = P * Rθ JC(t) Duty Cycle, D = t1 / t2 0.01 0.00001 0.0001 0.001 t 1, TIME (sec) 0.01 0.1 1 Figure 11. Transient Thermal Response Curve. F DP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6690S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.01 I DSS, REVERSE LEAKAGE CURRENT (A) T A = 100 C 0.001 o CURRENT: 0.8A/div 0.0001 o TA = 25 C 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) TIME: 12.5ns/div Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDP6690S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6035AL). CURRENT: 0.8A/div TIME: 12.5ns/div Figure 13. Non-SyncFET (FDP6035AL) body diode reverse recovery characteristic. F DP6690S/FDB6690S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4