FDP7030BL/FDB7030BL
October 2003
FDP7030BL/FDB7030BL
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
• 60 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ± 20
(Note 1) (Note 1)
Units
V V A W W/°C °C
60 180 60 0.4 –65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDB7030BL FDP7030BL Device FDB7030BL FDP7030BL Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45
©2003 Fairchild Semiconductor Corporation
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
Test Conditions
VDD = 15 V, ID = 60 A
Min Typ
Max
73 60
Units
mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VGS = 0 V VDS = 0 V 30 22 1 ± 100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 25 A VGS= 10 V, ID = 30 A, TJ=125°C VGS = 10 V, VDS = 10 V VDS = 10V, ID = 30 A
1
1.9 –5 6.8 8.5 10.1
3
V mV/°C
9 12 18
mΩ A
ID(on) gFS
30 85
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
1760 440 185
pF pF pF Ω
VGS = 15 mV,
f = 1.0 MHz
1.2
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 15V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
12 12 30 19
22 22 48 33 24
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 30 A,
17 5.4 6.4
Drain–Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr
Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 30 A
(Note 1)
60 0.92 1.3 30 20
A V nS nC
IF = 30 A, diF/dt = 100 A/µs
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
Typical Characteristics
180
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10V 6.0V 4.5V VGS = 3.5V 3.5V
150 ID, DRAIN CURRENT (A) 120
1.6
4.0V
90 60 30
1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1
3.5V
3.0V
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.030 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 30A VGS =10V
ID = 30A 0.025
1.4
1.2
0.020 TA = 125oC 0.015
1
0.8
0.010 TA = 25 C 0.005
o
0.6 -50 -25 0 25 50 75 100 125 o TJ, JUNCTION TEMPERATURE ( C) 150 175
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
90 VDS = 5V 75 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
1000 VGS = 0V 100 TA = 125oC
60
10
45 TA = 125 C 30 25 C 15
o o
1
25oC -55oC
-55 C
o
0.1
0.01
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP7030BL/FDB7030BL Rev D1(W)
FDP7030BL/FDB7030BL
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 30A 8 15V 6 CAPACITANCE (pF) VDS = 10V 20V
2500 f = 1MHz VGS = 0 V 2000
Ciss
1500
4
1000
Coss
500
2
Crss
0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 30 35 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
5000 SINGLE PULSE RθJC = 2.5°C/W TA = 25°C
ID, DRAIN CURRENT (A)
4000
RDS(ON) LIMIT
10µs 100µs 1mS 10mS 100m
100
3000
2000
10
DC VGS = 10V SINGLE PULSE RθJC = 2.5oC/W TA = 25 C
o
1000
1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.00001
0.0001
0.001 0.01 t1, TIME (sec)
0.1
1
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RθJC(t) = r(t) * RθJC RθJC = 2.5 °C/W P(pk t1 t2 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2
0.2
0.1
0.1 0.05 0.02 0.01
SINGLE PULSE
0.01 0.00001
0.0001
0.001 t1, TIME (sec)
0.01
0.1
1
Figure 11. Transient Thermal Response Curve.
FDP7030BL/FDB7030BL Rev D1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™
DISCLAIMER
LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™
Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3
SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I5