FDP7045L_04

FDP7045L/FDB7045L March 2004 FDP7045L/FDB7045L N-Channel Logic Level PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 100 A, 30 V RDS(ON) = 4.5 mΩ @ VGS = 10 V RDS(ON) = 6.0 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed PD TJ, TSTG TA=25oC unless otherwise noted Parameter Ratings 30 ± 20 (Note 1) Units V V A 100 75 300 107 0.7 –55 to +175 (Note 1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range W W/°C °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.4 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB7045L FDP7045L Device FDB7045L FDP7045L Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 ©2004 Fairchild Semiconductor Corporation FDP7045L/FDB7045L Rev D1(W) FDP7045L/FDB7045L Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VDD = 15 V, ID = 75 A Min Typ Max 330 75 Units mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VGS = 0 V VDS = 0 V 30 25 1 ± 100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 50 A VGS = 4.5 V, ID = 40 A VGS= 10 V, ID = 50 A, TJ=125°C VGS = 10 V, VDS = 10 V VDS = 5V, ID = 50 A 1 1.8 –6 3.5 4.0 5.5 3 V mV/°C 4.5 6.0 7.0 mΩ ID(on) gFS 50 165 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 4357 1092 399 pF pF pF Ω VGS = 15 mV, f = 1.0 MHz 1.4 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 16 13 74 41 29 24 119 66 58 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 50 A, 41 12 14 Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 50 A (Note 1) 75 0.91 48 42 1.2 A V nS nC IF = 50 A, diF/dt = 100 A/µs FDP7045L/FDB7045L Rev D1(W) FDP7045L/FDB7045L Typical Characteristics 100 VGS = 10V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 VGS = 3.0V 1.6 ID, DRAIN CURRENT (A) 75 6.0V 4.5V 3.0V 1.4 3.5V 1.2 4.0V 4.5V 5.0V 1 6.0V 10V 50 25 0 0 2.5V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.014 RDS(ON), ON-RESISTANCE (OHM) ID = 50A 0.012 0.01 0.008 0.006 0.004 0.002 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 50A VGS =10V 1.6 1.4 1.2 TA = 125oC 1 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 175 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 90 VDS = 10V IS, REVERSE DRAIN CURRENT (A) 75 ID, DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 VGS = 0V 100 TA = 125 C 25oC -55 C 0.1 o o 60 10 45 TA = 125oC 30 25 C 15 -55oC 0 1.5 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 2 3.5 o 1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP7045L/FDB7045L Rev D1(W) FDP7045L/FDB7045L Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 50A 8 15V 6 CAPACITANCE (pF) VDS = 10V 20V 6000 5000 4000 3000 2000 1000 f = 1MHz VGS = 0 V Ciss 4 Coss Crss 2 0 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 10µs Figure 8. Capacitance Characteristics. 5000 SINGLE PULSE RθJC = 1.4°C/W TA = 25°C ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100µs 1mS 10mS 100m DC 4000 100 3000 2000 10 VGS = 10V SINGLE PULSE o RθJC = 1.4 C/W TA = 25 C o 1000 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJC(t) = r(t) * RθJA RθJC = 1.4 °C/W P(pk t1 t2 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.00001 0.0001 0.001 t1, TIME (sec) 0.01 0.1 1 Figure 11. Transient Thermal Response Curve. FDP7045L/FDB7045L Rev D1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ FACT™ i-Lo™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10