FDP75N08_0606

FDP75N08 75V N-Channel MOSFET June 2006 UniFET FDP75N08 75V N-Channel MOSFET Features • • • • • • 75A, 75V, RDS(on) = 0.011Ω @VGS = 10 V Low gate charge ( typical 150 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G GDS TO-220 FDP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Parameter FDP75N08 75 75 47.7 300 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 1164 75 13.1 4.5 131 1 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FDP75N08 0.95 0.5 62.5 Units °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP75N08 Rev. A FDP75N08 75V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP75N08 Device FDP75N08 Package TO-220 Reel Size -- Tape Width -- Quantity 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 75 V, VGS = 0 V VDS = 60 V, TC = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 37.5 A VDS = 40 V, ID =37.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 75 ------ Typ -0.6 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2.0 ---9.5 15 4.0 11 -V mΩ S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---2940 680 85 3820 890 125 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time (Note 4, 5) VDD = 37.5 V, ID = 75A, RG = 25 Ω ----- 7.2 68 77 93 64 16 24 25 146 164 196 84 --- ns ns ns ns nC nC nC Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 60 V, ID = 75A, VGS = 10 V (Note 4, 5) ---- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 138µH, IAS = 75A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 75 A VGS = 0 V, IS = 75 A, dIF / dt = 100 A/µs (Note 4) ------ ---62 150 75 300 1.4 --- A A V ns nC 2 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0V 9.0V 7.5V 7.0V 6.5v 6.0V 5.5V 5.0V Bottom : 4.5V Top: Figure 2. Transfer Characteristics 100 ID, Drain Current [A] ID, Drain Current [A] 150 C -55 C 0 0 10 2 25 C 10 0 * Note : 1. 250µs Pulse Test 0 2. TC=25 C * Note : 1. VDS=40V 2. 250µs Pulse Test 10 1 1 0 10 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.012 RDS(ON) [Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 0.011 10 2 VGS = 10V 0.010 150 C 10 1 0 25 C 0 0.009 VGS = 20V 0.008 * Note : TJ = 25 C 0.007 0 25 50 75 100 125 150 175 200 o * Note : 1. VGS=0V 2. 250µs Pulse Test 0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VDS, Source-Drain Violtage [V] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 6000 10 5000 Coss Ciss VGS, Gate-Source Voltage [V] VDS = 37.5V VDS = 60V Capacitances [pF] 8 4000 6 3000 * Note : 1. VGS = 0 V 2. f = 1 MHz 4 2000 Crss 2 1000 * Note : ID = 75A 0 0 10 20 30 40 50 60 70 80 0 -1 10 10 0 10 1 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 37.5 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 80 10 3 10 µs 10 2 70 60 100 µs 1ms 10ms 100ms DC ID, Drain Current [A] ID, Drain Current [A] 2 10 1 Operation in This Area is Limited by R DS(on) 50 40 30 20 10 0 25 10 0 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 10 1 10 50 75 100 o 125 150 VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 (t), Thermal Response D = 0 .5 0 .2 10 -1 ? 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e N o te s : 0 ( 1 . Z ? JC t) = 1 .1 C /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z ? JC t) ( PDM t1 t2 Z ? JC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 4 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters 7 FDP75N08 Rev. A www.fairchildsemi.com FDP75N08 75V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FDP75N08 Rev. A www.fairchildsemi.com