FDP79N15

FDP79N15 / FDPF79N15 150V N-Channel MOSFET UniFET FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features • • • • • 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability May 2006 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP79N15 79 50 316 FDPF79N15 150 79* 50* 316* Unit V A A A V mJ A mJ V/ns ± 30 1669 79 46.3 4.5 463 3.7 -55 to +150 300 31 0.25 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FDP79N15 0.27 62.5 FDPF79N15 -62.5 Unit °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP79N15 / FDPF79N15 Rev. A FDP79N15 / FDPF79N15 150V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP79N15 FDPF79N15 Device FDP79N15 FDPF79N15 Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 150V, VGS = 0V VDS = 120V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 39.5A VDS = 40V, ID = 39.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 150 -----3.0 ------ Typ -0.15 -----0.025 46 2620 730 96 50 200 55 38 56 18 21 ---136 2.1 Max Units --1 10 100 -100 5.0 0.03 -3410 950 140 112 410 120 85 73 --79 316 1.4 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 75V, ID = 79A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 120V, ID = 79A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 79A VGS = 0V, IS = 79A dIF/dt =100A/μs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 79A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP79N15 / FDPF79N15 Rev. A 2 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 150 C 10 1 o 10 1 25 C -55 C ∝ Notes : 1. VDS = 40V 2. 250レ Pulse Test s o o ∝ Notes : 1. 250レ Pulse Test s 2. TC = 25∩ 10 -1 10 0 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.07 RDS(ON) [ヘ ],Drain-Source On-Resistance IDR, Reverse Drain Current [A] 0.06 10 2 0.05 VGS = 10V 0.04 10 1 150∩ 25∩ 0.03 VGS = 20V ∝ Note : TJ = 25∩ ∝ Notes : 1. VGS = 0V 2. 250レ Pulse Test s 0.02 0 25 50 75 100 125 150 175 200 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 6000 Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 5000 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS = 30V VDS = 75V VDS = 120V Capacitances [pF] 4000 Ciss 8 3000 ∝ Note ; 1. VGS = 0 V 2. f = 1 MHz 6 2000 4 Crss 1000 2 ∝ Note : ID = 79A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDP79N15 / FDPF79N15 Rev. A 3 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 34.5 A 0.9 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP79N15 10 3 Figure 9-2. Maximum Safe Operating Area for FDPF79N15 10 3 10 μs 100 μs 10 2 10 μs 10 2 1ms 100 μs 1ms 10ms 100ms Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 1 Operation in This Area is Limited by R DS(on) 100ms DC ID, Drain Current [A] 10ms 10 1 DC 10 0 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 0 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 VDS, Drain-SourceVoltage[V] VDS, Drain-SourceVoltage[V] Figure 10. Maximum Drain Current vs. Case Temperature 90 80 70 ID, Drain Current [A] 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature [∩ ] FDP79N15 / FDPF79N15 Rev. A 4 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP79N15 10 0 Z? JC Thermal Response (t), 10 -1 D=0.5 0.2 0.1 0.05 PDM t2 * Notes : 0 1. ZθJC(t) = 0.27 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) t1 10 -2 0.02 0.01 single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF79N15 10 0 D=0.5 Z? JC Thermal Response (t), 10 -1 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 * Notes : 0 1. ZθJC(t) = 0.67 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 10 -2 single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] FDP79N15 / FDPF79N15 Rev. A 5 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP79N15 / FDPF79N15 Rev. A 6 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP79N15 / FDPF79N15 Rev. A 7 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FDP79N15 / FDPF79N15 Rev. A 8 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FDP79N15 / FDPF79N15 Rev. A 9 15.87 ±0.20 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 10 10 FDP79N15 / FDPF79N15 Rev. A www.fairchildsemi.com