FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
March 2007
FDP7N50U/FDPF7N50U
500V N-Channel MOSFET Features
• 5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDP7N50U
5 3.0 20
FDPF7N50U
500 5* 3.0 * 20 * ±30 270 5 8.9 4.5
Unit
V A A A V mJ A mJ V/ns
89 0.71 -55 to +150 300
39 0.31
W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FDP7N50U
1.4 0.5 62.5
FDPF7N50U
3.2 -62.5
Unit
°C/W °C/W °C/W
©2007 Fairchild Semiconductor Corporation
1
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FDP7N50U/FDPF7N50U REV. B
FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP7N50U FDPF7N50U
Device
FDP7N50U FDPF7N50U
Package
TO-220 TO-220F
TC = 25°C unless otherwise noted
Reel Size
---
Tape Width
---
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 2.5A VDS = 40V, ID = 2.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
500 -----3.0 ------
Typ.
-0.5 -----1.2 2.5 720 95 9 6 55 25 35 12.8 3.7 5.8
Max Units
--25 250 100 -100 5.0 1.5 -940 190 13.5 20 120 60 80 16.6 --V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 250V, ID = 7A RG = 25Ω
(Note 4, 5)
------(Note 4, 5)
VDS = 400V, ID = 7A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 7A VGS = 0V, IS = 7A dIF/dt =100A/µs
(Note 4)
------
---40 0.04
5 20 1.6 ---
A A V ns µC
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7A, VDD = 50V, L=10mH, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP7N50U/FDPF7N50U REV. B
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FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
Top : VGS 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
10
1
ID , Drain Current [A]
15
ID, Drain Current [A]
150℃ 10
0
Bottom :
10
25℃
5
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
10
-1
※ Note 1. VDS = 40V 2. 250µ s Pulse Test
0
0
10
20
30
40
50
10
-2
VDS, Drain-Source Voltage [V]
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
RDS(ON) [Ω ],Drain-Source On-Resistance
2.5
IDR , Reverse Drain Current [A]
2.0
10
1
VGS = 10V
1.5
1.0
VGS = 20V
10
0
150℃
25℃
※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.5
※ Note : TJ = 25℃
0.0
0
5
10
15
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
12
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 100V
1000
VGS, Gate-Source Voltage [V]
10
VDS = 250V VDS = 400V
Ciss Coss
Capacitance [pF]
8
6
100
Crss
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2
※ Note : ID = 7 A
10
0 1
0
10
10
0
5
10
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP7N50U/FDPF7N50U REV. B
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FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
6
Figure 8. Maximum Drain Current Vs. Case Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
ID, Drain Current [A]
200
4
1.0
0.9
♦ Notes :
2
1. VGS = 0 V 2. ID = 250 µA
0.8 -100
-50
0
50
100
o
150
0 25
50
75
100
125
150
TJ, Junction Temperature [ C]
TC, Case Temperature [℃]
Figure 9-1. Maximum Safe Operating Area - FDP7N50U
Figure 9-2. Maximum Safe Operating Area - FDPF7N50U
10
1
10 us
10
1
10 us 100 us 1 ms 10 ms
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
10 ms
10
0
ID, Drain Current [A]
100 us 1 ms DC
Operation in This Area is Limited by R DS(on)
10
0
DC
10
-1
※ Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
※ Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-2
10
0
10
1
10
2
10
-2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
FDP7N50U/FDPF7N50U REV. B
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FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Figure 10-1. Transient Thermal Response Curve - FDP7N50U
10
0
Zθ JC Thermal Response (t),
D = 0 .5 0 .2 0 .1
10
-1
0 .0 5 0 .0 2 0 .0 1
PDM t1 t2
s in g le p u ls e
10
-2
※ N o te s : 1 . Z θ J C = 1 .4 ℃ /W M a x. (t) 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 10-2. Transient Thermal Response Curve - FDPF7N50U
D = 0 .5
Zθ JC Thermal Response (t),
10
0
0 .2 0 .1 0 .0 5
10
-1
PDM t1 t2
0 .0 2 0 .0 1
10
-2 -5
s in g le p u ls e
10
-4
※ N o te s : 1 . Z θ JC = 3 .2 ℃ /W M a x. (t) 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC (t)
10
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FDP7N50U/FDPF7N50U REV. B
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FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N50U/FDPF7N50U REV. B
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FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP7N50U/FDPF7N50U REV. B
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FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP7N50U/FDPF7N50U REV. B
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FDP7N50U/FDPF7N50U 500V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70)
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47 9.75 ±0.30 0.80 ±0.10
(3 ) 0°
0.35 ±0.10 2.54TYP [2.54 ±0.20]
#1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20
+0.10
2.76 ±0.20
9.40 ±0.20
Dimensions in Millimeters
FDP7N50U/FDPF7N50U REV. B
9
15.87 ±0.20
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