FDP80N06

FDP80N06 N-Channel MOSFET September 2007 UniFETTM FDP80N06 N-Channel MOSFET 60V, 80A, 10mΩ Features • RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A • Low gate charge(Typ. 57nC) • Low Crss(Typ. 145pF) • Fast switching • Improved dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies,active power factor correction, electronic lamp ballast based on half bridge topology. D G G DS TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 60 ±20 80 65 320 480 80 17.6 4.5 176 1.17 -55 to +175 300 Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.85 62.5 Units o C/W ©2007 Fairchild Semiconductor Corporation FDP80N06 Rev. A 1 www.fairchildsemi.com FDP80N06 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP80N06 Device FDP80N06 Package TO-220 Reel Size Tape Width Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25 C o 60 - 0.075 - 1 10 ±100 V V/oC µA nA VDS = 60V, VGS = 0V VDS = 48V, TC = 150oC VGS = ±20V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VDS = 25V, ID = 40A (Note 4) 2.0 - -8.5 67 4.0 10 - V mΩ S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 2450 910 145 3190 1190 190 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 48V, ID = 80A VGS = 10V (Note 4, 5) VDD = 30V, ID = 80A RG = 25Ω (Note 4, 5) 32 259 136 113 57 15 24 75 528 282 236 74 - ns ns ns ns nC nC nC - Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 80A VGS = 0V, ISD = 80A dIF/dt = 100A/µs (Note 4) - 64 127 80 320 1.4 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.15mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP80N06 Rev. A 2 www.fairchildsemi.com FDP80N06 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 400 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Figure 2. Transfer Characteristics 500 *Notes: 1. VDS = 20V 2. 250µs Pulse Test 100 ID,Drain Current[A] 100 ID,Drain Current[A] 10 175 C o -55 C 25 C o o 10 1 0.4 0.02 *Notes: 1. 250µs Pulse Test 2. TC = 25 C o 1 0.1 1 VDS,Drain-Source Voltage[V] 10 0 2 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.03 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 100 0.02 175 C o 25 C o VGS = 10V 10 0.01 VGS = 20V *Notes: 1. VGS = 0V 0.00 0 *Note: TJ = 25 C o 80 160 240 ID, Drain Current [A] 320 1 0.0 2. 250µs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 5. Capacitance Characteristics 6000 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 15V VDS = 30V VDS = 48V 8 4500 Capacitances [pF] Coss *Note: 1. VGS = 0V 2. f = 1MHz 6 3000 Crss 4 1500 2 *Note: ID = 80A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 15 30 45 Qg, Total Gate Charge [nC] 60 FDP80N06 Rev. A 3 www.fairchildsemi.com FDP80N06 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance 1.1 2.0 1.0 1.5 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 1.0 *Notes: 1. VGS = 10V 2. ID = 40A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.5 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 1000 30µs 100µs 1ms Figure 10. Maximum Drain Current vs. Case Temperature 90 75 ID, Drain Current [A] 100 ID, Drain Current [A] 80 10 Operation in This Area is Limited by R DS(on) 10ms DC 60 45 30 15 0 25 1 *Notes: 0.1 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 0.01 1 10 VDS, Drain-Source Voltage [V] 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 2 1 Thermal Response [ZθJC] 0.5 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 0.01 0.01 *Notes: Single pulse 1. ZθJC(t) = 0.85 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 1E-3 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDP80N06 Rev. A 4 www.fairchildsemi.com FDP80N06 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP80N06 Rev. A 5 www.fairchildsemi.com FDP80N06 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP80N06 Rev. A 6 www.fairchildsemi.com FDP80N06 N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP80N06 Rev. A 7 www.fairchildsemi.com FDP80N06 N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 8 FDP80N06 Rev. A www.fairchildsemi.com