FDP10N50F / FDPF10N50FT N-Channel MOSFET
FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω Features
• RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A • Low Gate Charge ( Typ. 18nC) • Low Crss ( Typ. 10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant
UniFETTM
January 2009
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed 9 5.4 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 125 1.0 -55 to +150 300 36 364 9 12.5 20 42 0.33 -Continuous (TC = 100oC) FDP10N50F FDPF10N50FT 500 ±30 9* 5.4* 36* Units V V A A mJ A mJ V/ns W W/oC
o o
Single Pulsed Avalanche Energy
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
FDP10N50F 1.0 62.5
FDPF10N50FT 3.0 62.5
Units
o
C/W
©2009 Fairchild Semiconductor Corporation FDP10N50F / FDPF10N50FT Rev. A
1
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP10N50F FDPF10N50FT Device FDP10N50F FDPF10N50FT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.5 10 100 ±100 V V/oC μA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 4.5A VDS = 20V, ID = 4.5A
(Note 4)
3.0 -
0.71 8.5
5.0 0.85 -
V Ω S
Dynamic Characteristics
Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 10A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5)
880 120 10 18 5 7.5
1170 160 15 24 -
pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 10A R G = 25 Ω
(Note 4, 5)
-
20 40 45 30
50 90 100 70
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 9A VGS = 0V, ISD = 9A dIF/dt = 100A/μs
(Note 4)
-
95 0.2
9 60 1.5 -
A A V ns μC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 9mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 8A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDP10N50F / FDPF10N50FT Rev. A
2
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20 10
ID,Drain Current[A]
VGS = 15.0 V 12.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
30
10
ID,Drain Current[A]
150 C
o
25 C -55 C
o
o
1
1
*Notes: 1. 250μs Pulse Test
0.1 0.1
2. TC = 25 C
o
1 VDS,Drain-Source Voltage[V]
10
0.1
*Notes: 1. VDS = 20V 2. 250μs Pulse Test
2
4 6 8 VGS,Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
1.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
30
RDS(ON) [Ω], Drain-Source On-Resistance
1.2
IS, Reverse Drain Current [A]
10
150 C 25 C
o
o
1.0
VGS = 10V VGS = 20V
1
0.8
0.6
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
0
4
8 12 ID, Drain Current [A]
16
20
0.1 0.0
2. 250μs Pulse Test
0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
2000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 100V VDS = 250V VDS = 400V
Coss
1500 Capacitances [pF]
*Note: 1. VGS = 0V 2. f = 1MHz
8
6
1000
Ciss
4
500
Crss
2
*Note: ID = 10A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
30
0
0
4
8 12 16 Qg, Total Gate Charge [nC]
20
FDP10N50F / FDPF10N50FT Rev. A
3
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. Maximum Safe Operating Area - FDPF10N50FT
50
20μs 100μs 1ms 10ms
1.1
ID, Drain Current [A]
10
1.0
1
Operation in This Area is Limited by R DS(on)
DC
0.9
*Notes: 1. VGS = 0V 2. ID = 250μA
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.01
1
10 100 VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current vs. Case Temperature
10
8 ID, Drain Current [A]
6
4
2
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDPF10N50FT
5 Thermal Response [ZθJC]
0.5 0.2 0.1
1
0.1
0.05 0.02 0.01
PDM
*Notes:
t1
t2
o
0.01
Single pulse
0.005 -5 10
1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t)
10
-4
10 10 10 1 Rectangular Pulse Duration [sec]
-3
-2
-1
10
10
2
FDP10N50F / FDPF10N50FT Rev. A
4
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP10N50F / FDPF10N50FT Rev. A
5
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
• d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
FDP10N50F / FDPF10N50FT Rev. A
6
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP10N50F / FDPF10N50FT Rev. A
7
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
Package Dimensions
TO-220F Potted
* Front/Back Side Isolation Voltage : 2700V
Dimensions in Millimeters
FDP10N50F / FDPF10N50FT Rev. A
8
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FDP10N50F / FDPF10N50FT N-Channel MOSFET
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Rev. I38
FDP10N50F / FDPF10N50FT Rev. A
9
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